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Sensitization of organic photovoltaic cells based on interlayer excitation energy transfer
http://hdl.handle.net/10091/10717
http://hdl.handle.net/10091/10717ccf14d91-babe-492d-a57e-402cce9bde34
名前 / ファイル | ライセンス | アクション |
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Sensitization_organic_photovoltaic_cells.pdf (448.3 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2010-10-19 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Sensitization of organic photovoltaic cells based on interlayer excitation energy transfer | |||||
言語 | ||||||
言語 | eng | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.orgel.2009.12.023 | |||||
関連名称 | 10.1016/j.orgel.2009.12.023 | |||||
キーワード | ||||||
主題 | Organic solar cells, Organic photovoltaic cells, Exciton transfer, Excitation transfer, Energy transfer, Forster resonant excitation transfer | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Ichikawa, Musubu
× Ichikawa, Musubu× Suto, Eiichi× Jeon, Hyeon-Gu× Taniguchi, Yoshio |
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信州大学研究者総覧へのリンク | ||||||
氏名 | Ichikawa, Musubu | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.WenUjFkV.html | |||||
信州大学研究者総覧へのリンク | ||||||
氏名 | Taniguchi, Yoshio | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.HCfpjekV.html | |||||
出版者 | ||||||
出版者 | ELSEVIER SCIENCE BV | |||||
引用 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Organic Electronics. 11(4):700-704 (2010) | |||||
書誌情報 |
Organic Electronics 巻 11, 号 4, p. 700-704, 発行日 2010-04 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We incorporated an additional p-type organic semiconductor layer (APL) between the anode and the phthalocyanine layer, which is an indispensable p-type semiconductor layer (IPL) in forming a p/n junction with a fullerene C-60 layer. We used two thiophene/phenylene co-oligomers as the APL. The incorporation increases the short-circuit current density (J(SC)) and enhances incident photon-current conversion efficiency (IPCE) over the wavelength region where the APL shows strong absorption. Combined dependence of the APL/IPL implies that Forster resonance excitation transfer is the main factor in J(SC) and IPCE enhancements. We demonstrate clearly that the 'positive' hole injection barrier at the interface between the APL and the IPL impacts the smooth transportation of holes to the indium-tin-oxide anode. However, the small positive hole barrier of 0.1 eV has no noticeable influence on the fill factor of the current density versus voltage characteristic under photoirradiation, or on those devices with 'negative' hole barriers. | |||||
資源タイプ(コンテンツの種類) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Article | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1566-1199 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11621763 | |||||
権利 | ||||||
権利情報 | Copyright (c) 2010 Elsevier B.V. | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
WoS | ||||||
表示名 | Web of Science | |||||
URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000275793300030 |