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{"_buckets": {"deposit": "07206f03-08da-42a4-bc83-d1bea4e0629b"}, "_deposit": {"id": "18090", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "18090"}, "status": "published"}, "_oai": {"id": "oai:soar-ir.repo.nii.ac.jp:00018090", "sets": ["1222"]}, "author_link": ["50554", "50555", "50556"], "item_1628147817048": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_6_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2014-05-01", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "44", "bibliographicPageStart": "42", "bibliographicVolumeNumber": "393", "bibliographic_titles": [{"bibliographic_title": "JOURNAL OF CRYSTAL GROWTH\t"}]}]}, "item_6_description_20": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Heavily arsenic (As) doped Si crystals were grown by the Czochralski (CZ) method, and constitutional supercooling in As-doped CZ-Si crystal growth was investigated. When the As concentration in the crystal was high, cellular growth was induced and SiAs precipitates were then observed following the cellular structure. The As concentration increases in the cellular structure along the growth direction and around the precipitates it reaches approximately 4 at%, which corresponds to the maximum solid solubility of As in Si. According to the estimation of critical growth conditions for constitutional supercooling, it qualitatively obeys the theoretical equation of constitutional supercooling. (C) 2013 Elsevier By. All rights reserved.", "subitem_description_type": "Abstract"}]}, "item_6_description_5": {"attribute_name": "引用", "attribute_value_mlt": [{"subitem_description": "JOURNAL OF CRYSTAL GROWTH. 393:42-44 (2014)", "subitem_description_type": "Other"}]}, "item_6_link_3": {"attribute_name": "信州大学研究者総覧へのリンク", "attribute_value_mlt": [{"subitem_link_text": "Taishi, Toshinori", "subitem_link_url": "http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html"}]}, "item_6_link_67": {"attribute_name": "WoS", "attribute_value_mlt": [{"subitem_link_text": "Web of Science", "subitem_link_url": "http://gateway.isiknowledge.com/gateway/Gateway.cgi?\u0026GWVersion=2\u0026SrcAuth=ShinshuUniv\u0026SrcApp=ShinshuUniv\u0026DestLinkType=FullRecord\u0026DestApp=WOS\u0026KeyUT=000334336400010"}]}, "item_6_publisher_4": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "ELSEVIER SCIENCE BV"}]}, "item_6_relation_48": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "10.1016/j.jcrysgro.2013.10.037"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1016/j.jcrysgro.2013.10.037", "subitem_relation_type_select": "DOI"}}]}, "item_6_rights_62": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 2014. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ "}]}, "item_6_select_64": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_6_source_id_35": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0022-0248", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_39": {"attribute_name": "NII ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0022-0248", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_40": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00696341", "subitem_source_identifier_type": "NCID"}]}, "item_6_text_69": {"attribute_name": "wosonly authkey", "attribute_value_mlt": [{"subitem_text_value": "Doping; Segregation; Constitutional supercooling; Czochralski method; Semiconducting silicon"}]}, "item_6_text_70": {"attribute_name": "wosonly keywords", "attribute_value_mlt": [{"subitem_text_value": "SILICON"}]}, "item_6_textarea_68": {"attribute_name": "wosonly abstract", "attribute_value_mlt": [{"subitem_textarea_value": "Heavily arsenic (As) doped Si crystals were grown by the Czochralski (CZ) method, and constitutional supercooling in As-doped CZ-Si crystal growth was investigated. When the As concentration in the crystal was high, cellular growth was induced and SiAs precipitates were then observed following the cellular structure. The As concentration increases in the cellular structure along the growth direction and around the precipitates it reaches approximately 4 at%, which corresponds to the maximum solid solubility of As in Si. According to the estimation of critical growth conditions for constitutional supercooling, it qualitatively obeys the theoretical equation of constitutional supercooling. (C) 2013 Elsevier By. All rights reserved."}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Taishi, Toshinori"}], "nameIdentifiers": [{"nameIdentifier": "50554", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohno, Yutaka"}], "nameIdentifiers": [{"nameIdentifier": "50555", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yonenaga, Ichiro"}], "nameIdentifiers": [{"nameIdentifier": "50556", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2016-05-24"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "Constitutional_supercooling_in_heavily_As-doped.pdf", "filesize": [{"value": "478.7 kB"}], "format": "binary/octet-stream", "future_date_message": "", "is_thumbnail": false, "licensefree": "© 2014. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ ", "licensetype": "license_note", "mimetype": "binary/octet-stream", "size": 478700.0, "url": {"label": "Constitutional_supercooling_in_heavily_As-doped", "url": "https://soar-ir.repo.nii.ac.jp/record/18090/files/Constitutional_supercooling_in_heavily_As-doped.pdf"}, "version_id": "42a2e3eb-b1da-41d4-b139-dbc004ad59ba"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Doping", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Segregation", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Constitutional supercooling", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Czochralski method", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Semiconducting silicon", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Constitutional supercooling in heavily As-doped Czochralski Si crystal growth", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Constitutional supercooling in heavily As-doped Czochralski Si crystal growth", "subitem_title_language": "en"}]}, "item_type_id": "6", "owner": "1", "path": ["1222"], "permalink_uri": "http://hdl.handle.net/10091/00018856", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-05-24"}, "publish_date": "2016-05-24", "publish_status": "0", "recid": "18090", "relation": {}, "relation_version_is_last": true, "title": ["Constitutional supercooling in heavily As-doped Czochralski Si crystal growth"], "weko_shared_id": -1}
Constitutional supercooling in heavily As-doped Czochralski Si crystal growth
http://hdl.handle.net/10091/00018856
http://hdl.handle.net/10091/000188567f708e6a-3235-4260-82ed-e5ba980a152c
名前 / ファイル | ライセンス | アクション |
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Constitutional_supercooling_in_heavily_As-doped (478.7 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2016-05-24 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Constitutional supercooling in heavily As-doped Czochralski Si crystal growth | |||||
言語 | ||||||
言語 | eng | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.jcrysgro.2013.10.037 | |||||
関連名称 | 10.1016/j.jcrysgro.2013.10.037 | |||||
キーワード | ||||||
主題 | Doping, Segregation, Constitutional supercooling, Czochralski method, Semiconducting silicon | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Taishi, Toshinori
× Taishi, Toshinori× Ohno, Yutaka× Yonenaga, Ichiro |
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信州大学研究者総覧へのリンク | ||||||
氏名 | Taishi, Toshinori | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html | |||||
出版者 | ||||||
出版者 | ELSEVIER SCIENCE BV | |||||
引用 | ||||||
内容記述タイプ | Other | |||||
内容記述 | JOURNAL OF CRYSTAL GROWTH. 393:42-44 (2014) | |||||
書誌情報 |
JOURNAL OF CRYSTAL GROWTH 巻 393, p. 42-44, 発行日 2014-05-01 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Heavily arsenic (As) doped Si crystals were grown by the Czochralski (CZ) method, and constitutional supercooling in As-doped CZ-Si crystal growth was investigated. When the As concentration in the crystal was high, cellular growth was induced and SiAs precipitates were then observed following the cellular structure. The As concentration increases in the cellular structure along the growth direction and around the precipitates it reaches approximately 4 at%, which corresponds to the maximum solid solubility of As in Si. According to the estimation of critical growth conditions for constitutional supercooling, it qualitatively obeys the theoretical equation of constitutional supercooling. (C) 2013 Elsevier By. All rights reserved. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0022-0248 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00696341 | |||||
権利 | ||||||
権利情報 | © 2014. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
WoS | ||||||
表示名 | Web of Science | |||||
URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000334336400010 |