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Nitridation was enhanced with increasing RF power and with decreasing growth pressure. However, the exact capacitance-voltage (C-V) properties of the nitride layer/SiC interface could not be determined because of the leakage current. The SiO2 film was deposited on the nitrided layer by thermal chemical vapor deposition method using tetraethoxysilane (TEOS) omit obtain an insulating film with sufficient thickness and an exact interface property. The interface state density D-it was evaluated from C-V characteristics by the Terman method. It was indicated that D-it near the mid gap of the TEOS oxide/nitride layer structure was higher than those of the TEOS-SiO2 films and thermal oxide film. The D-it of the oxide/nitride layer successfully decreased by post NH3 annealing."}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Ishida, Y"}], "nameIdentifiers": [{"nameIdentifier": "38746", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Chen, C"}], "nameIdentifiers": [{"nameIdentifier": "38747", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hagihara, M"}], "nameIdentifiers": [{"nameIdentifier": "38748", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamakami, T"}], "nameIdentifiers": [{"nameIdentifier": "38749", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hayashibe, R"}], "nameIdentifiers": [{"nameIdentifier": "38750", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Abe, K"}], "nameIdentifiers": [{"nameIdentifier": "38751", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kamimura, K"}], "nameIdentifiers": [{"nameIdentifier": "38752", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2015-09-28"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JJAP3.pdf", "filesize": [{"value": "160.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 160200.0, "url": {"label": "JJAP3.pdf", "url": "https://soar-ir.repo.nii.ac.jp/record/12650/files/JJAP3.pdf"}, "version_id": "9c12b1e4-c402-4be4-85f7-232986997274"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Characterization of metal-insulator-semicomductor capacitors with insulating nitride films grown on 4H-SiC", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Characterization of metal-insulator-semicomductor capacitors with insulating nitride films grown on 4H-SiC", "subitem_title_language": "en"}]}, "item_type_id": "6", "owner": "1", "path": ["1222"], "permalink_uri": "http://hdl.handle.net/10091/1159", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2008-09-17"}, "publish_date": "2008-09-17", "publish_status": "0", "recid": "12650", "relation": {}, "relation_version_is_last": true, "title": ["Characterization of metal-insulator-semicomductor capacitors with insulating nitride films grown on 4H-SiC"], "weko_shared_id": -1}
Characterization of metal-insulator-semicomductor capacitors with insulating nitride films grown on 4H-SiC
http://hdl.handle.net/10091/1159
http://hdl.handle.net/10091/1159c023a1d2-ea39-4ccc-becc-b7777b799e7b
名前 / ファイル | ライセンス | アクション |
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JJAP3.pdf (160.2 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-09-17 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Characterization of metal-insulator-semicomductor capacitors with insulating nitride films grown on 4H-SiC | |||||
言語 | ||||||
言語 | eng | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1143/JJAP.47.676 | |||||
関連名称 | 10.1143/JJAP.47.676 | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Ishida, Y
× Ishida, Y× Chen, C× Hagihara, M× Yamakami, T× Hayashibe, R× Abe, K× Kamimura, K |
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信州大学研究者総覧へのリンク | ||||||
氏名 | Kamimura, K | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.yVkaZVkh.html | |||||
出版者 | ||||||
出版者 | INST PURE APPLIED PHYSICS | |||||
引用 | ||||||
内容記述タイプ | Other | |||||
内容記述 | JAPANESE JOURNAL OF APPLIED PHYSICS. 47(1):676-678(2008) | |||||
書誌情報 |
JAPANESE JOURNAL OF APPLIED PHYSICS 巻 47, 号 1, p. 676-678, 発行日 2008-01 |
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資源タイプ(コンテンツの種類) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Article | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0021-4922 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA12295836 | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
WoS | ||||||
表示名 | Web of Science | |||||
URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000255019500068 |