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An FET with a fine AC5-CF3 single-crystal demonstrated field-effect mobility as high as 3.1 cm(2) V-1 s(-1). This value implies that AC5-CF3 must be a useful n-type organic semiconducting material. The performance of AC5-CF3 TFTs depended on the substrate temperatures at which AC5-CF3 thin films were deposited. From the viewpoint of mobility, threshold voltage and sub-threshold slope, we obtained the highest performance at the substrate temperature of 100 degrees C. This was because a higher substrate temperature for deposition enlarged the size of grains in AC-CF3 thin films and improved the characteristics of grain boundaries. However, 120 degrees C depositions of AC5-CF3 induced deep valley-like cracks in the thin films, probably because of the difference between the coefficients of thermal expansion for AC5-CF3 thin films and silicon wafer substrates, resulting in effects such as worsening mobility. AC5-CF3 TFTs prepared at 100 degrees C deposition showed no channel length dependence of the field-effect mobility, and their average field-effect mobility was 0.55 +/- 0.05 cm(2) V-1 s(-1). (C) 2010 Elsevier B.V. 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Thin-film and single-crystal transistors based on a trifluoromethyl-substituted alternating (thiophene/phenylene)-co-oligomer
http://hdl.handle.net/10091/10720
http://hdl.handle.net/10091/107203936bc98-c981-41d3-93d1-27f0086fd3e1
名前 / ファイル | ライセンス | アクション |
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Thin-film_single-crystal_transistors.pdf (519.3 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2010-10-20 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Thin-film and single-crystal transistors based on a trifluoromethyl-substituted alternating (thiophene/phenylene)-co-oligomer | |||||
言語 | ||||||
言語 | eng | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.orgel.2010.06.010 | |||||
関連名称 | 10.1016/j.orgel.2010.06.010 | |||||
キーワード | ||||||
主題 | Organic thin-film transistors, Organic field-effect transistors, n-Type semiconductors, Alternating co-oligomer (Thiophene/phenylene)-co-oligomer, Electron mobility | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Ichikawa, Musubu
× Ichikawa, Musubu× Kato, Tatsuya× Uchino, Tetsuro× Tsuzuki, Takeo× Inoue, Masamitsu× Jeon, Hyeon-Gu× Koyama, Toshiki× Taniguchi, Yoshio |
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信州大学研究者総覧へのリンク | ||||||
氏名 | Ichikawa, Musubu | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.WenUjFkV.html | |||||
信州大学研究者総覧へのリンク | ||||||
氏名 | Koyama, Toshiki | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.ZNkUjekV.html | |||||
信州大学研究者総覧へのリンク | ||||||
氏名 | Taniguchi, Yoshio | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.HCfpjekV.html | |||||
出版者 | ||||||
出版者 | ELSEVIER SCIENCE BV | |||||
引用 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Organic Electronics. 11(9):1549-1554 (2010) | |||||
書誌情報 |
Organic Electronics 巻 11, 号 9, p. 1549-1554, 発行日 2010-09 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We demonstrated the performance of thin-film transistors (TFTs) and single-crystal field-effect transistors (FETs) based on a trifluoromethyl-substituted alternating (thiophene/phenylene)-co-oligomer (AC5-CF3), 1,4-bis(5'-(4 ''-trifluoromethylphenyl)thiophene-2'-yl) benzene. An FET with a fine AC5-CF3 single-crystal demonstrated field-effect mobility as high as 3.1 cm(2) V-1 s(-1). This value implies that AC5-CF3 must be a useful n-type organic semiconducting material. The performance of AC5-CF3 TFTs depended on the substrate temperatures at which AC5-CF3 thin films were deposited. From the viewpoint of mobility, threshold voltage and sub-threshold slope, we obtained the highest performance at the substrate temperature of 100 degrees C. This was because a higher substrate temperature for deposition enlarged the size of grains in AC-CF3 thin films and improved the characteristics of grain boundaries. However, 120 degrees C depositions of AC5-CF3 induced deep valley-like cracks in the thin films, probably because of the difference between the coefficients of thermal expansion for AC5-CF3 thin films and silicon wafer substrates, resulting in effects such as worsening mobility. AC5-CF3 TFTs prepared at 100 degrees C deposition showed no channel length dependence of the field-effect mobility, and their average field-effect mobility was 0.55 +/- 0.05 cm(2) V-1 s(-1). | |||||
資源タイプ(コンテンツの種類) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Article | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1566-1199 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11621763 | |||||
権利 | ||||||
権利情報 | Copyright (c) 2010 Elsevier B.V. | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
WoS | ||||||
表示名 | Web of Science | |||||
URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000281519700011 |