2024-03-28T17:49:07Z
https://soar-ir.repo.nii.ac.jp/oai
oai:soar-ir.repo.nii.ac.jp:00013304
2022-12-14T04:03:28Z
1309:1310
Preferential {100} etching of boron-doped diamond electrodes and diamond particles by CO2 activation
Zhang, Junfeng
Nakai, Takaaki
Uno, Masaharu
Nishiki, Yoshinori
Sugimoto, Wataru
Copyright© 2014 Elsevier Ltd.
The etching behavior of polycrystalline boron-doped diamond (BDD) electrodes and diamond particles with gaseous CO2 at 800 and 900 degrees C was investigated by field-emission scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Polycrystalline BDD (800 ppm), composed of a mixture of cubic {100} and triangular {111} orientated planes, was used so as to pursue the possibility of preferential etching by high temperature CO2 treatment. Nanometer sized pits were observed on the {100} planes while no change was observable for the {111} planes when the activation temperature was 800 degrees C. The difference in the etching behavior by CO2 with regard to the different planes was clarified using diamond particles and comparing with steam activation. The results demonstrate that CO2 activation leads to preferential {100} etching, whereas steam-activation results in preferential {111} etching.
Article
CARBON. 70:207-214 (2014)
PERGAMON-ELSEVIER SCIENCE LTD
2014-04
eng
journal article
AM
http://hdl.handle.net/10091/17841
https://soar-ir.repo.nii.ac.jp/records/13304
https://doi.org/10.1016/j.carbon.2013.12.109
10.1016/j.carbon.2013.12.109
0008-6223
AA00598943
CARBON
70
207
214
https://soar-ir.repo.nii.ac.jp/record/13304/files/Preferential_100_etching_boron-doped_diamond.pdf
application/pdf
1.8 MB
2015-09-28