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https://soar-ir.repo.nii.ac.jp/oai
oai:soar-ir.repo.nii.ac.jp:00018088
2022-12-14T04:12:58Z
1221:1222
Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3
Taishi, Toshinori
Hashimoto, Yoshio
Ise, Hideaki
Murao, Yu
Ohsawa, Takayuki
Yonenaga, Ichiro
© 2012. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
Doping
Impurities
Czochralski method
Semiconducting germanium
We propose two unique Czochralski (CZ) techniques for growing germanium (Ge) crystals with an extremely low dislocation density and high interstitial oxygen concentration ([Oi]) using boron oxide (B2O3) and a silica crucible. When a Ge melt is partially covered with liquid B2O3, but only on the outer region of the melt surface, germanium-oxide (GeO2)-related particles forming naturally in the melt are effectively dissolved by the liquid B2O3. The clean central portion of the melt produces dislocation-free undoped or Ga-doped Ge crystals. In addition, Ge crystals with [Oi] up to 6 x 10(17) cm(-3) can be grown from a melt fully covered by liquid B2O3 with added GeO2 powder. The reaction and transportation of oxygen atoms during the growth process using B2O3 was investigated, revealing that liquid B2O3 acts like a catalyst without heavy contamination of the growing Ge crystal by B and Si atoms. (C) 2011 Elsevier B.V. All rights reserved.
JOURNAL OF CRYSTAL GROWTH. 360:47-51 (2012)
ELSEVIER SCIENCE BV
2012-12-01
eng
journal article
AM
http://hdl.handle.net/10091/00018854
https://soar-ir.repo.nii.ac.jp/records/18088
https://doi.org/10.1016/j.jcrysgro.2011.11.051
10.1016/j.jcrysgro.2011.11.051
0022-0248
AA00696341
Journal of Crystal Growth
360
47
51
https://soar-ir.repo.nii.ac.jp/record/18088/files/Czochralski_growth_techniques_of_germanium_crystals_grown.pdf
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