2024-03-28T14:28:24Z
https://soar-ir.repo.nii.ac.jp/oai
oai:soar-ir.repo.nii.ac.jp:00018466
2022-12-14T04:05:54Z
1221:1222
Plasma Nitridation of 4H-SiC by Glow Discharge of N2/H2 Mixed Gases
Akahane, Yoshiyuki
Kimura, Kyosuke
Kano, Takuo
Watanabe, Yukimune
Yamakami, Tomohiko
Fujimaki, Shinji
Kamimura, Kiichi
© 2015 Trans Tech Publications, Switzerland
Nitride
MIS
plasma
SiC
The mixed gas of nitrogen and hydrogen was used for the plasma nitridation of SiC surface.A small amount of hydrogen was effective to activate the nitridation reaction and suppress the oxidationreaction. The interface properties were improved by using nitride layer as an interfacial bufferlayer of SiC MIS structure.
Article
Materials Science Forum, Vols. 821-823, pp. 504-507 (2015)
Trans Tech Publications
2015-06
eng
journal article
AM
http://hdl.handle.net/10091/00019228
https://soar-ir.repo.nii.ac.jp/records/18466
https://doi.org/10.4028/www.scientific.net/MSF.821-823.504
10.4028/www.scientific.net/MSF.821-823.504
1662-9752
Materials Science Forum
821-823
504
507
https://soar-ir.repo.nii.ac.jp/record/18466/files/Plasma_Nitridation_of_4H-SiC.pdf
application/pdf
316.2 kB
2016-10-14