2024-03-28T16:53:58Z
https://soar-ir.repo.nii.ac.jp/oai
oai:soar-ir.repo.nii.ac.jp:00019574
2022-12-14T04:01:04Z
1221:1222
Channel doping concentration and cell program state dependence on random telegraph noise spatial and statistical distribution in 30 nm NAND flash memory
Tomita, Toshihiro
Miyaji, Kousuke
© 2015 The Japan Society of Applied Physics
The dependence of spatial and statistical distribution of random telegraph noise (RTN) in a 30 nm NAND flash memory on channel doping concentration N-A and cell program state V-th is comprehensively investigated using three-dimensional Monte Carlo device simulation considering random dopant fluctuation (RDF). It is found that single trap RTN amplitude Delta V-th is larger at the center of the channel region in the NAND flash memory, which is closer to the jellium (uniform) doping results since N-A is relatively low to suppress junction leakage current. In addition, Delta V-th peak at the center of the channel decreases in the higher V-th state due to the current concentration at the shallow trench isolation (STI) edges induced by the high vertical electrical field through the fringing capacitance between the channel and control gate. In such cases, Delta V-th distribution slope. cannot be determined by only considering RDF and single trap. (C) 2015 The Japan Society of Applied Physics
Article
JAPANESE JOURNAL OF APPLIED PHYSICS. 54(4): 04DD02 (2015)
IOP PUBLISHING LTD
2015
eng
journal article
AM
http://hdl.handle.net/10091/00020335
https://soar-ir.repo.nii.ac.jp/records/19574
https://doi.org/10.7567/JJAP.54.04DD02
10.7567/JJAP.54.04DD02
0021-4922
JAPANESE JOURNAL OF APPLIED PHYSICS
54
4
04DD02
https://soar-ir.repo.nii.ac.jp/record/19574/files/Channel_doping_concentration_and_cell_program_state_dependence_on_random_telegraph_noise_spatial_and_statistical_distribution.pdf
application/pdf
926.5 kB
2018-03-09