2024-03-04T17:43:30Z
https://soar-ir.repo.nii.ac.jp/oai
oai:soar-ir.repo.nii.ac.jp:00019872
2022-12-14T04:16:28Z
1169:1170
Relativistic tight-binding approximation method for materials immersed in a uniform magnetic field: Application to crystalline silicon
Higuchi, Katsuhiko
Hamal, Dipendra Bahadur
Higuchi, Masahiko
©2015 American Physical Society
We present a relativistic tight-binding (TB) approximation method that is applicable to actual crystalline materials immersed in a uniform magnetic field. The magnetic Bloch theorem is used to make the dimensions of the Hamiltonian matrix finite. In addition, by means of the perturbation theory, the magnetic hopping integral that appears in the Hamiltonian matrix is reasonably approximated as the relativistic hopping integral multiplied by the magnetic-field-dependent phase factor. In order to calculate the relativistic hopping integral, the relativistic version of the so-called Slater-Koster table is also given in an explicit form. We apply the present method to crystalline silicon immersed in a uniform magnetic field, and reveal its energy-band structure that is defined in the magnetic first Brillouin zone. It is found that the widths of energy-bands increase with increasing the magnetic field, which indicates the magnetic-field dependence of the appropriateness of the effective mass approximation. The recursive energy spectrum, which is the so-called butterfly diagram, can also be seen in the k-space plane perpendicular to the magnetic field.
Article
PHYSICAL REVIEW B. 91(7):075122 (2015)
AMER PHYSICAL SOC
2015-02-23
eng
journal article
VoR
http://hdl.handle.net/10091/00020633
https://soar-ir.repo.nii.ac.jp/records/19872
https://doi.org/10.1103/PhysRevB.91.075122
10.1103/PhysRevB.91.075122
1098-0121
AA11187113
PHYSICAL REVIEW B
91
7
075122
https://soar-ir.repo.nii.ac.jp/record/19872/files/PhysRevB.91.075122.pdf
application/pdf
5.7 MB
2018-05-24