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Morphological Control of Periodic GaAs Hole Arrays by Simple Au-Mediated Wet Etching
Yasukawa, Yukiko
Asoh, Hidetaka
Ono, Sachiko
POROUS SILICON
NANOWIRE ARRAYS
CARBON NANOTUBES
SOLAR-CELLS
GAN
FABRICATION
CATALYST
SURFACE
METALS
In this study we report etched-GaAs morphologies with noble-metal layers embedded in the etching structures that are prepared by a simple wet process. Well-controlled n-GaAs (100) hole arrays are formed through metal-assisted chemical etching using a sputtered Au layer as an etching catalyst. GaAs exhibits anisotropic etching behavior, which originates from the substrate crystallography. The configuration of hole arrays is determined by the concentration of hydrofluoric acid included in the etching solution, the arrangement of Au catalysis layers relative to the preferential etching direction of the GaAs (100) substrate, and the etching time. The relationship between the etching process and the resultant hole structure is also discussed. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.021206jes] All rights reserved.
Article
JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 159(5):D328-D332 (2012)
journal article
ELECTROCHEMICAL SOC INC
2012
application/pdf
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
5
159
D328
D332
0013-4651
AA00697016
https://soar-ir.repo.nii.ac.jp/record/12408/files/Morphological_Control_Periodic_GaAs_Hole_Arrays.pdf
eng
10.1149/2.021206jes
https://doi.org/10.1149/2.021206jes
Copyright © The Electrochemical Society, Inc. 2012. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in J. Electrochem. Soc. 2012 volume 159, issue 5, D328-D332 (2012).