2024-03-28T18:57:04Z
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oai:soar-ir.repo.nii.ac.jp:00013077
2023-03-16T05:05:33Z
1221:1223:1224:1284
非晶質 Ge 膜の電気的特質
Electrical Properties of Amorphous Ge' Films
伊東, 謙太郎
Amorphous Ge film, vacuum-evaporated on glass substrates, is known as a sort of semi-conductor. The present thesis is intended to investigate the influences of film thickness and impurities on its electrical resistivity as well as the temperature dependence of the resistivity, and following conclusions are drawn ; It (i.e., resistivity of amorphous Ge film) is independent of the thickness of the film within the range of 200-1000A. It is also independent of the vacuum ambients when film is produced in the vacuum of 10⁻⁹-10⁻⁷ Torr, though it grows higher when produced in 10⁻⁴ Torr owing to the incorporation of residual gases. It is rather insensitive to the addition of impurities such as Al, In and Sb below 1 atomic per cent. The temperature dependence of resistivity of pure, well-annealed amorphous Ge film was measured (below amorphous-crystalline transition temperature). And it is found that the activation energy for the electrical conduction amounts to 1.0 eV. This is to be interpreted in terms of the energy band gap broader than in the case of crystalline Ge.
Article
信州大学工学部紀要 23: 97-103 (1967)
departmental bulletin paper
信州大学工学部
1967-12-25
application/pdf
信州大学工学部紀要
23
97
103
0037-3818
AN00121228
https://soar-ir.repo.nii.ac.jp/record/13077/files/Engineering23-05.pdf
jpn