2024-03-29T11:47:26Z
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2022-12-14T03:46:05Z
1309:1310
Thin-film and single-crystal transistors based on a trifluoromethyl-substituted alternating (thiophene/phenylene)-co-oligomer
Ichikawa, Musubu
Kato, Tatsuya
Uchino, Tetsuro
Tsuzuki, Takeo
Inoue, Masamitsu
Jeon, Hyeon-Gu
Koyama, Toshiki
Taniguchi, Yoshio
Organic thin-film transistors
Organic field-effect transistors
n-Type semiconductors
Alternating co-oligomer (Thiophene/phenylene)-co-oligomer
Electron mobility
We demonstrated the performance of thin-film transistors (TFTs) and single-crystal field-effect transistors (FETs) based on a trifluoromethyl-substituted alternating (thiophene/phenylene)-co-oligomer (AC5-CF3), 1,4-bis(5'-(4 ''-trifluoromethylphenyl)thiophene-2'-yl) benzene. An FET with a fine AC5-CF3 single-crystal demonstrated field-effect mobility as high as 3.1 cm(2) V-1 s(-1). This value implies that AC5-CF3 must be a useful n-type organic semiconducting material. The performance of AC5-CF3 TFTs depended on the substrate temperatures at which AC5-CF3 thin films were deposited. From the viewpoint of mobility, threshold voltage and sub-threshold slope, we obtained the highest performance at the substrate temperature of 100 degrees C. This was because a higher substrate temperature for deposition enlarged the size of grains in AC-CF3 thin films and improved the characteristics of grain boundaries. However, 120 degrees C depositions of AC5-CF3 induced deep valley-like cracks in the thin films, probably because of the difference between the coefficients of thermal expansion for AC5-CF3 thin films and silicon wafer substrates, resulting in effects such as worsening mobility. AC5-CF3 TFTs prepared at 100 degrees C deposition showed no channel length dependence of the field-effect mobility, and their average field-effect mobility was 0.55 +/- 0.05 cm(2) V-1 s(-1).
Article
Organic Electronics. 11(9):1549-1554 (2010)
journal article
ELSEVIER SCIENCE BV
2010-09
application/pdf
Organic Electronics
9
11
1549
1554
1566-1199
AA11621763
https://soar-ir.repo.nii.ac.jp/record/13447/files/Thin-film_single-crystal_transistors.pdf
eng
10.1016/j.orgel.2010.06.010
https://doi.org/10.1016/j.orgel.2010.06.010
Copyright (c) 2010 Elsevier B.V.