@article{oai:soar-ir.repo.nii.ac.jp:00012313,
 author = {Hoshikawa,  K and Taishi,  T and Ohba,  E and Miyagawa,  C and Kobayashi,  T and Yanagisawa,  J and Shinozuka,  M},
 journal = {JOURNAL OF CRYSTAL GROWTH},
 month = {Sep},
 note = {A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in which thin-neck formation follows the initial seeding. Low-angle grain boundaries generated at the periphery of the seeding interface were eliminated at the thin neck, and the c-axis sapphire crystals with main bodies free from low-angle grain boundaries were grown., Article, JOURNAL OF CRYSTAL GROWTH. 401:146-149 (2014)},
 pages = {146--149},
 title = {Vertical Bridgman growth of sapphire crystals, with thin-neck formation process},
 volume = {401},
 year = {2014}
}