{"created":"2021-03-01T06:15:13.378107+00:00","id":12313,"links":{},"metadata":{"_buckets":{"deposit":"ee548e05-c198-4b18-8ed3-77f1e426bc40"},"_deposit":{"id":"12313","owners":[],"pid":{"revision_id":0,"type":"depid","value":"12313"},"status":"published"},"_oai":{"id":"oai:soar-ir.repo.nii.ac.jp:00012313","sets":["1221:1222"]},"author_link":["37387","37388","37389","37390","37391","37392","37393"],"item_1628147817048":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_6_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2014-09-01","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"149","bibliographicPageStart":"146","bibliographicVolumeNumber":"401","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF CRYSTAL GROWTH"}]}]},"item_6_description_20":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in which thin-neck formation follows the initial seeding. Low-angle grain boundaries generated at the periphery of the seeding interface were eliminated at the thin neck, and the c-axis sapphire crystals with main bodies free from low-angle grain boundaries were grown.","subitem_description_type":"Abstract"}]},"item_6_description_30":{"attribute_name":"資源タイプ（コンテンツの種類）","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_6_description_5":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"JOURNAL OF CRYSTAL GROWTH. 401:146-149 (2014)","subitem_description_type":"Other"}]},"item_6_link_3":{"attribute_name":"信州大学研究者総覧へのリンク","attribute_value_mlt":[{"subitem_link_text":"Hoshikawa, K","subitem_link_url":"http://soar-rd.shinshu-u.ac.jp/profile/ja.jakhPpym.html"},{"subitem_link_text":"Taishi, T","subitem_link_url":"http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html"}]},"item_6_link_67":{"attribute_name":"WoS","attribute_value_mlt":[{"subitem_link_url":"http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000340001800030"}]},"item_6_publisher_4":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"ELSEVIER SCIENCE BV"}]},"item_6_relation_48":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1016/j.jcrysgro.2013.12.051"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.jcrysgro.2013.12.051","subitem_relation_type_select":"DOI"}}]},"item_6_rights_62":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright © 2014 Published by Elsevier B.V.<br/>NOTICE: this is the author's version of a work that was accepted for publication in JOURNAL OF CRYSTAL GROWTH.<br/> Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, <br/> and other quality control mechanisms may not be reflected in this document. <br/> Changes may have been made to this work since it was submitted for publication. <br/> A definitive version was subsequently published in JOURNAL OF CRYSTAL GROWTH<br/>, VOL:401, (2014) DOI:10.1016/j.jcrysgro.2013.12.051"}]},"item_6_source_id_35":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0022-0248","subitem_source_identifier_type":"ISSN"}]},"item_6_source_id_40":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00696341","subitem_source_identifier_type":"NCID"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hoshikawa,  K"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Taishi,  T"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ohba,  E"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Miyagawa,  C"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kobayashi,  T"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yanagisawa,  J"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Shinozuka,  M"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2015-09-28"}],"displaytype":"detail","filename":"VB_sapphire_with_thin_neck.pdf","filesize":[{"value":"334.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"VB_sapphire_with_thin_neck.pdf","url":"https://soar-ir.repo.nii.ac.jp/record/12313/files/VB_sapphire_with_thin_neck.pdf"},"version_id":"421e3a6f-b896-471c-8f52-9bf994aa1686"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Bridgman technique","subitem_subject_scheme":"Other"},{"subitem_subject":"Growth from melt","subitem_subject_scheme":"Other"},{"subitem_subject":"Seed crystals","subitem_subject_scheme":"Other"},{"subitem_subject":"Single crystal growth","subitem_subject_scheme":"Other"},{"subitem_subject":"Sapphire","subitem_subject_scheme":"Other"},{"subitem_subject":"Light emitting diodes","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal 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