@article{oai:soar-ir.repo.nii.ac.jp:00012314,
 author = {Hoshikawa,  K and Osada,  J and Saitou,  Y and Ohba,  E and Miyagawa,  C and Kobayashi,  T and Yanagisawa,  J and Shinozuka,  M and Kanno,  K},
 journal = {JOURNAL OF CRYSTAL GROWTH},
 month = {Jun},
 note = {The growth of sapphire by the traditional vertical Bridgman (VB) method was studied by using various shapes of seed crystals and tungsten (W) crucibles shaped to match the seeds. Approximately 2-in. diameter, c-axis sapphire single crystals were reproducibly grown from three kinds of seed: thin, tapered and full diameter. Factors relating seed type to single-crystal growth are discussed, including the reproducibility of seeding processes, and the generation and elimination of low-angle grain boundaries (LAGBs). What was learned facilitated the subsequent growth of large-diameter, 3-, 4- and 6-in., c-axis single-crystal sapphires from full-diameter seeds., Article, JOURNAL OF CRYSTAL GROWTH. 395:80-89 (2014)},
 pages = {80--89},
 title = {Vertical Bridgman growth of sapphire-Seed crystal shapes and seeding characteristics},
 volume = {395},
 year = {2014}
}