@article{oai:soar-ir.repo.nii.ac.jp:00012383,
 author = {Taishi,  Toshinori and Ise,  Hideaki and Murao,  Yu and Osawa,  Takayuki and Suezawa,  Masashi and Tokumoto,  Yuki and Ohno,  Yutaka and Hoshikawa,  Keigo and Yonenaga,  Ichiro},
 issue = {19},
 journal = {JOURNAL OF CRYSTAL GROWTH},
 month = {Sep},
 note = {Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B(2)O(3)) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm(-1) in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B(2)O(3) liquid was about 10(16) cm(-3) and was almost the same as that in a Ge crystal grown without B(2)O(3). Oxygen concentration in a Ge crystal was enhanced to be greater than 10(17) cm(-3) by growing a crystal from a melt fully covered with B(2)O(3); with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5 x 10(17) cm(-3). The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4., Article, JOURNAL OF CRYSTAL GROWTH. 312(19):2783-2787 (2010)},
 pages = {2783--2787},
 title = {Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities},
 volume = {312},
 year = {2010}
}