{"created":"2021-03-01T06:15:17.628761+00:00","id":12383,"links":{},"metadata":{"_buckets":{"deposit":"1ab8c04d-a2c1-4b7f-8e91-212074540701"},"_deposit":{"id":"12383","owners":[],"pid":{"revision_id":0,"type":"depid","value":"12383"},"status":"published"},"_oai":{"id":"oai:soar-ir.repo.nii.ac.jp:00012383","sets":["1221:1222"]},"author_link":["37676","37677","37678","37679","37680","37681","37682","37683","37684"],"item_1628147817048":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_6_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-09-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"19","bibliographicPageEnd":"2787","bibliographicPageStart":"2783","bibliographicVolumeNumber":"312","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF CRYSTAL GROWTH"}]}]},"item_6_description_20":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B(2)O(3)) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm(-1) in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B(2)O(3) liquid was about 10(16) cm(-3) and was almost the same as that in a Ge crystal grown without B(2)O(3). Oxygen concentration in a Ge crystal was enhanced to be greater than 10(17) cm(-3) by growing a crystal from a melt fully covered with B(2)O(3); with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5 x 10(17) cm(-3). The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.","subitem_description_type":"Abstract"}]},"item_6_description_30":{"attribute_name":"資源タイプ（コンテンツの種類）","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_6_description_5":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"JOURNAL OF CRYSTAL GROWTH. 312(19):2783-2787 (2010)","subitem_description_type":"Other"}]},"item_6_link_3":{"attribute_name":"信州大学研究者総覧へのリンク","attribute_value_mlt":[{"subitem_link_text":"Taishi, Toshinori","subitem_link_url":"http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html"},{"subitem_link_text":"Hoshikawa, Keigo","subitem_link_url":"http://soar-rd.shinshu-u.ac.jp/profile/ja.jakhPpym.html"}]},"item_6_link_67":{"attribute_name":"WoS","attribute_value_mlt":[{"subitem_link_url":"http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000282349500026"}]},"item_6_publisher_4":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"ELSEVIER SCIENCE BV"}]},"item_6_relation_48":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1016/j.jcrysgro.2010.05.045"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.jcrysgro.2010.05.045","subitem_relation_type_select":"DOI"}}]},"item_6_rights_62":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright© 2010 Elsevier B.V."}]},"item_6_source_id_35":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0022-0248","subitem_source_identifier_type":"ISSN"}]},"item_6_source_id_40":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00696341","subitem_source_identifier_type":"NCID"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Taishi,  Toshinori"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ise,  Hideaki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Murao,  Yu"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Osawa,  Takayuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Suezawa,  Masashi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tokumoto,  Yuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ohno,  Yutaka"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hoshikawa,  Keigo"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yonenaga,  Ichiro"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2015-09-28"}],"displaytype":"detail","filename":"Czochralski-growth_germanium_crystals_containing_high.pdf","filesize":[{"value":"337.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Czochralski-growth_germanium_crystals_containing_high.pdf","url":"https://soar-ir.repo.nii.ac.jp/record/12383/files/Czochralski-growth_germanium_crystals_containing_high.pdf"},"version_id":"4e477cb5-c858-4e10-980f-74c98afb669b"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Doping","subitem_subject_scheme":"Other"},{"subitem_subject":"Oxygen impurity","subitem_subject_scheme":"Other"},{"subitem_subject":"Czochralski method","subitem_subject_scheme":"Other"},{"subitem_subject":"Single crystal growth","subitem_subject_scheme":"Other"},{"subitem_subject":"Semiconducting germanium","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities","subitem_title_language":"en"}]},"item_type_id":"6","owner":"1","path":["1222"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2013-01-25"},"publish_date":"2013-01-25","publish_status":"0","recid":"12383","relation_version_is_last":true,"title":["Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-12-14T04:07:03.421156+00:00"}