@article{oai:soar-ir.repo.nii.ac.jp:00012403,
 author = {Kamimura,  Kiichi and Shiozawa,  Hiroaki and Yamakami,  Tomohiko and Hayashibe,  Rinpei},
 issue = {12},
 journal = {IEICE TRANSACTIONS ON ELECTRONICS},
 month = {Dec},
 note = {Interface state density was estimated from diode factor n of SiC MIS Schottky diode. The interface state density was the order of 10(12) cm(-2)eV(-1), and was same order to the value for the sample carefully prepared by oxidation and post oxidation annealing. The interface state density determined from n was consistent to the value calculated from the capacitance voltage curve of SiO(2)/nitride/SiC MIS diode by Terman method. High temperature nitridation was effective to reduce the interface state density., Article, IEICE TRANSACTIONS ON ELECTRONICS. E92C(12):1470-1474 (2009)},
 pages = {1470--1474},
 title = {Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode},
 volume = {E92C},
 year = {2009}
}