{"created":"2021-03-01T06:15:18.841615+00:00","id":12403,"links":{},"metadata":{"_buckets":{"deposit":"2c02128b-7973-47b2-87ac-bf225e4a42b3"},"_deposit":{"id":"12403","owners":[],"pid":{"revision_id":0,"type":"depid","value":"12403"},"status":"published"},"_oai":{"id":"oai:soar-ir.repo.nii.ac.jp:00012403","sets":["1221:1222"]},"author_link":["37771","37772","37773","37774"],"item_1628147817048":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_6_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-12","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"12","bibliographicPageEnd":"1474","bibliographicPageStart":"1470","bibliographicVolumeNumber":"E92C","bibliographic_titles":[{"bibliographic_title":"IEICE TRANSACTIONS ON ELECTRONICS"}]}]},"item_6_description_20":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Interface state density was estimated from diode factor n of SiC MIS Schottky diode. The interface state density was the order of 10(12) cm(-2)eV(-1), and was same order to the value for the sample carefully prepared by oxidation and post oxidation annealing. The interface state density determined from n was consistent to the value calculated from the capacitance voltage curve of SiO(2)/nitride/SiC MIS diode by Terman method. High temperature nitridation was effective to reduce the interface state density.","subitem_description_type":"Abstract"}]},"item_6_description_30":{"attribute_name":"資源タイプ（コンテンツの種類）","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_6_description_5":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"IEICE TRANSACTIONS ON ELECTRONICS. E92C(12):1470-1474 (2009)","subitem_description_type":"Other"}]},"item_6_link_3":{"attribute_name":"信州大学研究者総覧へのリンク","attribute_value_mlt":[{"subitem_link_text":"Kamimura, Kiichi","subitem_link_url":"http://soar-rd.shinshu-u.ac.jp/profile/ja.yVkaZVkh.html"}]},"item_6_link_67":{"attribute_name":"WoS","attribute_value_mlt":[{"subitem_link_url":"http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000273190900012"}]},"item_6_publisher_4":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG"}]},"item_6_relation_46":{"attribute_name":"他の資源との関係：URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://search.ieice.org/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://search.ieice.org/","subitem_relation_type_select":"URI"}}]},"item_6_relation_48":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1587/transele.E92.C.1470"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1587/transele.E92.C.1470","subitem_relation_type_select":"DOI"}}]},"item_6_rights_62":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright© 2009 IEICE"}]},"item_6_source_id_35":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0916-8524","subitem_source_identifier_type":"ISSN"}]},"item_6_source_id_40":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA10826283","subitem_source_identifier_type":"NCID"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kamimura,  Kiichi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Shiozawa,  Hiroaki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yamakami,  Tomohiko"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hayashibe,  Rinpei"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2015-09-28"}],"displaytype":"detail","filename":"Interface_State_Density_Direct_Nitridation.pdf","filesize":[{"value":"382.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Interface_State_Density_Direct_Nitridation.pdf","url":"https://soar-ir.repo.nii.ac.jp/record/12403/files/Interface_State_Density_Direct_Nitridation.pdf"},"version_id":"eb804f8d-1b17-42d4-9288-6224a26d5519"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"SiC","subitem_subject_scheme":"Other"},{"subitem_subject":"nitride","subitem_subject_scheme":"Other"},{"subitem_subject":"interface","subitem_subject_scheme":"Other"},{"subitem_subject":"MIS Schottky","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode","subitem_title_language":"en"}]},"item_type_id":"6","owner":"1","path":["1222"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-09-21"},"publish_date":"2012-09-21","publish_status":"0","recid":"12403","relation_version_is_last":true,"title":["Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-12-14T04:01:38.647277+00:00"}