{"created":"2021-03-01T06:15:19.146008+00:00","id":12408,"links":{},"metadata":{"_buckets":{"deposit":"3bc276b7-6a06-492b-b3c6-107f9794467d"},"_deposit":{"id":"12408","owners":[],"pid":{"revision_id":0,"type":"depid","value":"12408"},"status":"published"},"_oai":{"id":"oai:soar-ir.repo.nii.ac.jp:00012408","sets":["1221:1222"]},"author_link":["37786","37787","37788"],"item_1628147817048":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_6_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2012","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"D332","bibliographicPageStart":"D328","bibliographicVolumeNumber":"159","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF THE ELECTROCHEMICAL SOCIETY"}]}]},"item_6_description_20":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In this study we report etched-GaAs morphologies with noble-metal layers embedded in the etching structures that are prepared by a simple wet process. Well-controlled n-GaAs (100) hole arrays are formed through metal-assisted chemical etching using a sputtered Au layer as an etching catalyst. GaAs exhibits anisotropic etching behavior, which originates from the substrate crystallography. The configuration of hole arrays is determined by the concentration of hydrofluoric acid included in the etching solution, the arrangement of Au catalysis layers relative to the preferential etching direction of the GaAs (100) substrate, and the etching time. The relationship between the etching process and the resultant hole structure is also discussed. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.021206jes] All rights reserved.","subitem_description_type":"Abstract"}]},"item_6_description_30":{"attribute_name":"資源タイプ（コンテンツの種類）","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_6_description_5":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 159(5):D328-D332 (2012)","subitem_description_type":"Other"}]},"item_6_link_67":{"attribute_name":"WoS","attribute_value_mlt":[{"subitem_link_url":"http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000302211800044"}]},"item_6_publisher_4":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"ELECTROCHEMICAL SOC INC"}]},"item_6_relation_48":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1149/2.021206jes"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1149/2.021206jes","subitem_relation_type_select":"DOI"}}]},"item_6_rights_62":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright © The Electrochemical Society, Inc. 2012. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in J. Electrochem. Soc. 2012 volume 159, issue 5, D328-D332 (2012)."}]},"item_6_source_id_35":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0013-4651","subitem_source_identifier_type":"ISSN"}]},"item_6_source_id_40":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00697016","subitem_source_identifier_type":"NCID"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yasukawa,  Yukiko"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Asoh,  Hidetaka"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ono,  Sachiko"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2015-09-28"}],"displaytype":"detail","filename":"Morphological_Control_Periodic_GaAs_Hole_Arrays.pdf","filesize":[{"value":"709.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Morphological_Control_Periodic_GaAs_Hole_Arrays.pdf","url":"https://soar-ir.repo.nii.ac.jp/record/12408/files/Morphological_Control_Periodic_GaAs_Hole_Arrays.pdf"},"version_id":"6a94c650-3456-461a-89aa-eceb0da4026e"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"POROUS SILICON","subitem_subject_scheme":"Other"},{"subitem_subject":"NANOWIRE ARRAYS","subitem_subject_scheme":"Other"},{"subitem_subject":"CARBON NANOTUBES","subitem_subject_scheme":"Other"},{"subitem_subject":"SOLAR-CELLS","subitem_subject_scheme":"Other"},{"subitem_subject":"GAN","subitem_subject_scheme":"Other"},{"subitem_subject":"FABRICATION","subitem_subject_scheme":"Other"},{"subitem_subject":"CATALYST","subitem_subject_scheme":"Other"},{"subitem_subject":"SURFACE","subitem_subject_scheme":"Other"},{"subitem_subject":"METALS","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Morphological Control of Periodic GaAs Hole Arrays by Simple Au-Mediated Wet Etching","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Morphological Control of Periodic GaAs Hole Arrays by Simple Au-Mediated Wet Etching","subitem_title_language":"en"}]},"item_type_id":"6","owner":"1","path":["1222"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-09-11"},"publish_date":"2012-09-11","publish_status":"0","recid":"12408","relation_version_is_last":true,"title":["Morphological Control of Periodic GaAs Hole Arrays by Simple Au-Mediated Wet Etching"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-12-14T04:30:14.969972+00:00"}