{"created":"2021-03-01T06:15:26.160815+00:00","id":12523,"links":{},"metadata":{"_buckets":{"deposit":"89067f60-f076-48fb-a402-340401b15920"},"_deposit":{"id":"12523","owners":[],"pid":{"revision_id":0,"type":"depid","value":"12523"},"status":"published"},"_oai":{"id":"oai:soar-ir.repo.nii.ac.jp:00012523","sets":["1221:1222"]},"author_link":["38259","38260"],"item_1628147817048":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_6_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-07-12","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageStart":"74717","bibliographicVolumeNumber":"79","bibliographic_titles":[{"bibliographic_title":"Journal of Physical Society of Japan"}]}]},"item_6_description_20":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The intrinsic luminescence appearing at 500 nm in Bi4Ge3O12 (e-BGO) and that at 450 nm in Bi12GeO20 (s-BGO) have been studied over a wide range of temperature T  = 5–300 K by using a Nd:YAG laser and synchrotron radiation as excitation light sources. Luminescence decay curves in e-BGO depend dramatically on the laser power; they are composed of three decay components under high-density excitation, while they show a single exponential decay at low-density excitation. From temperature dependences of the decay time and emission intensity, it is clarified that the triplet state of a self-trapped exciton (STE) responsible for the e-BGO luminescence consists of a pair of closely spaced sublevels with separation energy of 5.7 meV. The decay curves of s-BGO luminescence are essentially nonexponential, irrespective of the excitation power. Time-resolved luminescence measurements of s-BGO suggest the existence of a singlet state lying higher than the triplet STE state. The excitation spectra for the intrinsic luminescence bands have been measured up to 35 eV (35 nm) at 5 K. From the obtained spectra, it is obvious that the multiplication of electronic excitations takes place efficiently in both BGOs. The production processes of multiple excitons are discussed by referring to a recent study on the electronic structures. ©2010 The Physical Society of Japan","subitem_description_type":"Abstract"}]},"item_6_description_30":{"attribute_name":"資源タイプ（コンテンツの種類）","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_6_description_5":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"Journal of Physical Society of Japan. 79:074717 (2010)","subitem_description_type":"Other"}]},"item_6_link_67":{"attribute_name":"WoS","attribute_value_mlt":[{"subitem_link_text":"Web of Science","subitem_link_url":"http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000280096900048"}]},"item_6_publisher_4":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Physical Society of Japan"}]},"item_6_relation_48":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1143/JPSJ.79.074717"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1143/JPSJ.79.074717","subitem_relation_type_select":"DOI"}}]},"item_6_rights_62":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"©2010 The Physical Society of Japan"}]},"item_6_source_id_35":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0031-9015","subitem_source_identifier_type":"ISSN"}]},"item_6_source_id_40":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00704814","subitem_source_identifier_type":"NCID"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Itoh,  M"}],"nameIdentifiers":[{"nameIdentifier":"38259","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Katagiri,  T"}],"nameIdentifiers":[{"nameIdentifier":"38260","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2015-09-28"}],"displaytype":"detail","filename":"JPSJ.pdf","filesize":[{"value":"690.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JPSJ.pdf","url":"https://soar-ir.repo.nii.ac.jp/record/12523/files/JPSJ.pdf"},"version_id":"613b6f29-2861-44a0-8218-f0838dd6b24d"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Intrinsic Luminescence from Self-Trapped Excitons in Bi4Ge3O12 and Bi12GeO20: Decay Kinetics and Multiplication of Electronic Excitations","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Intrinsic Luminescence from Self-Trapped Excitons in Bi4Ge3O12 and Bi12GeO20: Decay Kinetics and Multiplication of Electronic Excitations","subitem_title_language":"en"}]},"item_type_id":"6","owner":"1","path":["1222"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2010-09-08"},"publish_date":"2010-09-08","publish_status":"0","recid":"12523","relation_version_is_last":true,"title":["Intrinsic Luminescence from Self-Trapped Excitons in Bi4Ge3O12 and Bi12GeO20: Decay Kinetics and Multiplication of Electronic Excitations"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-12-14T04:30:19.908502+00:00"}