{"created":"2021-03-01T06:15:54.859785+00:00","id":12993,"links":{},"metadata":{"_buckets":{"deposit":"27dec917-3b7e-40d2-b916-d4bdd5dcbfb2"},"_deposit":{"id":"12993","owners":[],"pid":{"revision_id":0,"type":"depid","value":"12993"},"status":"published"},"_oai":{"id":"oai:soar-ir.repo.nii.ac.jp:00012993","sets":["1221:1223:1224:1275"]},"author_link":["39783","39784"],"item_10_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"　"}]},"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1972-07-25","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"278","bibliographicPageStart":"271","bibliographicVolumeNumber":"32","bibliographic_titles":[{"bibliographic_title":"信州大学工学部紀要"}]}]},"item_10_description_20":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Thin films of manganese-aluminum alloy usable as a storage medium in optical memory system were prepared and some properties were measured. The most suitable preparation method was as follows: double layers of composition of 70 % manganese and 30 % aluminum in mol ratio are made by vacuum deposition. These are nucleated and annealed in the hydrogen atmosphere for 1 hour at 1060-1080 ℃, and afterwards quenched at 8 ℃/sec. The advantageous properties of these films are; (1) the transmission coefficient of light is large, (2) the figure of merit of magneto-optical Faraday rotation F/α is 3.9, which is twice as large as that of manganese-bismuth thin film, (3) the magnetic property is also suitable for the storage of high packing density, (4) there is no sign of oxidation. The disadvantageous problems to be resolved are imperfection of uniformity and the fact that it is very difficult to magnetize the film plane vertically.","subitem_description_type":"Abstract"}]},"item_10_description_30":{"attribute_name":"資源タイプ（コンテンツの種類）","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_10_description_5":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"信州大学工学部紀要 32: 271-278 (1972)","subitem_description_type":"Other"}]},"item_10_publisher_4":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"信州大学工学部"}]},"item_10_source_id_35":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0037-3818","subitem_source_identifier_type":"ISSN"}]},"item_10_source_id_40":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00121228","subitem_source_identifier_type":"NCID"}]},"item_1627890569677":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"松本,  光功","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"39783","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"小山,  安正","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"39784","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2015-09-28"}],"displaytype":"detail","filename":"Engineering32-19.pdf","filesize":[{"value":"750.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Engineering32-19.pdf","url":"https://soar-ir.repo.nii.ac.jp/record/12993/files/Engineering32-19.pdf"},"version_id":"3f019e13-a3a3-4126-bd41-8d61b3e2a447"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"記憶用 MnAl 薄膜の試作","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"記憶用 MnAl 薄膜の試作","subitem_title_language":"ja"},{"subitem_title":"Preparation of MnAl Thin Films Usable as a Storage Medium in Optical Memory System","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["1275"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-03-03"},"publish_date":"2009-03-03","publish_status":"0","recid":"12993","relation_version_is_last":true,"title":["記憶用 MnAl 薄膜の試作"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-03-16T04:33:07.009042+00:00"}