@article{oai:soar-ir.repo.nii.ac.jp:00013180,
 author = {中野,  朝安},
 journal = {信州大学工学部紀要},
 month = {Dec},
 note = {This paper deals with the deterioration of the transistor caused by the water vapor or gases in atmosphere and the heat generated by the backward current. It is said that the life of transistor is very long, but as the affair now stands, the characteristics are gradually changed. Its cause is mainly due to water vapor, but we have assumed that it is due to the effects of oxyzen and water vapor duffusing into Ge. From these results, surface conductance is changed and deterioration is occurred. The large current deterioration is due to the same reason. And so one of its counter-measures is the spread of the insulator solvent on the barrier. The cooling of the transistor in market is so insufficient that the effect of this technic may be covered by increasing the backward satulation current. But this technic is of no use, so we must examine the duffusing effects of gases which may be considered as the true cause of the deterioration., Article, 信州大学工学部紀要 6: 1-8 (1956)},
 pages = {1--8},
 title = {トランジスタの劣化に就いて},
 volume = {6},
 year = {1956}
}