@article{oai:soar-ir.repo.nii.ac.jp:00013213, author = {石田, 光夫}, journal = {信州大学工学部研究報告}, month = {Mar}, note = {Experimental work on the inverse voltage characteristics of Ge rectifier has been studied. As a result, the negative conductance was observed in the exponential regions of V-I characteristics, and it was founded, if the circuit elements is suitably adjusted, the terminal voltages of rectifier will oscillate. For example, a capacitance is connected to the crystal terminals, the C-R circuits will oscillate over a wide range of frequencies up to few hundred Kc. In order to explain the oscillation mechanisms of this type, we shall now combine several charactcristics. The characteristics of chief importance are; (1) transient phenomena of the nonlinear C-R circuits, (2) hysteresis loop of V-I characteristics in the inverse-voltage region. The results, which is deduced from this mechanism, have fully agreed with the experimental results. Moreover, we pointed out the necessity of taking the pre-break-down phenomena in order to increase the oscillation frequency., Article, 信州大学工学部研究報告 3: 45-54(1954)}, pages = {45--54}, title = {Ge 整流器の負特性発振}, volume = {3}, year = {1954} }