@article{oai:soar-ir.repo.nii.ac.jp:00013214, author = {中野, 朝安}, journal = {信州大学工学部研究報告}, month = {Mar}, note = {This paper deals with a new and very interesting technique by which the properties of p type silicon surface are altered very materially by bombardment with ions of such gases as nitrogen, air and argon, and with other semicondctor metarial such as. n type Si, p and n type Ge etc. This technique is reported by R. S. Ohl in Bell Laboratory about the same time 1952. My report is independant from his. Of course physical prinsiple is the same, but my technique by glow discharge is different in the point of several variables of experiment such as in velocity, intensity of bombarding current, length of time of bombardment, etc. My experimen-tal results are easier superior, and more satisfactory. This technique is only effective to p type Si, and not effective to other semiconductor material. From this results, we consider that ion bombardment produces the donor level by lattice defect in silicon. I could not understand the relativity of a particle and positive ion., Article, 信州大学工学部研究報告 3: 55-68(1954)}, pages = {55--68}, title = {放電による結晶整流器の表面処理に就いて}, volume = {3}, year = {1954} }