@inproceedings{oai:soar-ir.repo.nii.ac.jp:00013256,
 author = {Sonehara,  Makoto and Otani,  Naoki and Goto,  Takanori and Kikuchi,  Yusuke and Sato,  Toshiro and Yamasawa,  Kiyohito and Miura,  Yoshimasa and Asanuma,  Kazushi},
 book = {IEEE SENSORS 2009 Conference},
 month = {Oct},
 note = {IEEE SENSORS 2009 Conference, 25-28 October 2009. Christchurch Convention Centre in New Zealand, This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder., An optical probe current sensor using a Kerr effect ofan Fe-Si/Mn-Ir exchange-coupled film has been investigated. The optical sensing technique has the advantage of no induced noise from the external electromagnetic interference. In addition, since the proposed method using the Kerr effect of single domain exchange-coupled magnetic thin film utilizes only magnetization rotation, the Barkhausen noise due to a domain wall pinning can be excluded. A fabricated optical probe current sensor consisting of He-Ne laser,e-Si/Mn-Ir exchange-coupled film, beam splitter, pin-PD and differential amplifier, exhibited a current sensing bandwidth of 10 kHz and a sensitivity of 2.26 V/A. By using the fabricated optical probe current sensor, the current sensing for PWM inverter motor has been demonstrated., Article, IEEE SENSORS 2009 Conference : 1232-1237 (2009)},
 pages = {1232--1237},
 publisher = {IEEE},
 title = {Fundamental Study of Optical Probe Current Sensor using Kerr Effect of Single Magnetic Domain Film},
 year = {2009}
}