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Thermal treatment effects on N-alkyl perylene diimide thin-film transistors with different alkyl chain
http://hdl.handle.net/10091/15974
http://hdl.handle.net/10091/1597429fea4ec-682b-4eaf-84b8-e606c4ff75b2
名前 / ファイル | ライセンス | アクション |
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Thermal_treatment_effects_N-alkyl_perylene_diimide.pdf (746.3 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-09-21 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Thermal treatment effects on N-alkyl perylene diimide thin-film transistors with different alkyl chain | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Jeon, Hyeon-Gu
× Jeon, Hyeon-Gu× Hattori, Jinya× Kato, Shimpei× Oguma, Naomi× Hirata, Naoki× Taniguchi, Yoshio× Ichikawa, Musubu |
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信州大学研究者総覧へのリンク | ||||||
氏名 | Taniguchi, Yoshio | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.HCfpjekV.html | |||||
信州大学研究者総覧へのリンク | ||||||
氏名 | Ichikawa, Musubu | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.WenUjFkV.html | |||||
出版者 | ||||||
出版者 | AMER INST PHYSICS | |||||
引用 | ||||||
内容記述タイプ | Other | |||||
内容記述 | JOURNAL OF APPLIED PHYSICS. 108(12):124512 (2010) | |||||
書誌情報 |
JOURNAL OF APPLIED PHYSICS 巻 108, 号 12, 発行日 2010-12-15 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The authors report that thermal treatment effect on various N,N'-dialkyl-3,4,9,10-perylene tetracarbxylic diimides [PTCDI-Cn, alkyl-dodecyl (n = 12), butadecyl (n = 14), octadecyl (n = 18)] thin-film transistors (TFTs) depends on the substituted alkyl chain length. It is clearly demonstrated that there are two kinds of molecular movements during the thermal treatment on PTCDI films; molecular rearrangement in the same layer and molecular migration from the lower layer to the upper layer. The former is directly related to the grain growth and can be controllable by applying an external electric field. The latter is also related not only to the grain growth but also to the formation of cracks between grains. These two movements show opposite dependence on the alkyl chain length during the thermal treatment; the former is more active in longer alkyl chain, but the latter in shorter one. However, they also have opposite effect to TFT performance, and PTCDI films with longer alkyl chains have great advantage on TFT performance for the thermal treatment. Consequently, PTCDI-C18 TFTs show the highest electron mobility as large as 1.2 cm(2)/V s after the thermal treatment at 140 degrees C. (C) 2010 American Institute of Physics. [doi:10.1063/1.3525997] | |||||
資源タイプ(コンテンツの種類) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Article | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0021-8979 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00693547 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.3525997 | |||||
関連名称 | 10.1063/1.3525997 | |||||
権利 | ||||||
権利情報 | Copyright© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 108, 124512 (2010) and may be found at https://doi.org/10.1063/1.3525997 . | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
WoS | ||||||
表示名 | Web of Science | |||||
URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000285768800126 |