@article{oai:soar-ir.repo.nii.ac.jp:00013421,
 author = {Ichikawa,  Musubu and Yamamura,  Kenta and Jeon,  Hyeon-Gu and Nakajima,  Miyako and Taniguchi,  Yoshio},
 issue = {5},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {Mar},
 note = {We investigate the effects of volatile additives in solutions used to prepare thin-film transistors (TFTs) of regioregular poly(3-hexylthiophene) (P3HT). We use the additives trifluoromethylbenzene (TFMB) and methylcyclohexane (MCH) because they are poor solvents for P3HT. The additives improve the performance of the resulting TFTs when the boiling point (T(b)) of the major solvent, carbon tetrachloride, is lower than that of the additive. The maximum mobility is (4.0 +/- 60.9) x 10(-2) cm(2)V(-1)s(-1), which is 6.1 times larger than that of TFTs prepared without TFMB or MCH added to the solution; the on/off ratio and the subthreshold slope were also improved. The relative T(b) of the solvent and the additive affected the film formation with the amount of TFMB or MCH remaining at the final stage of thin film deposition influencing the precipitation of P3HT aggregates. (C) 2011 American Institute of Physics. [doi:10.1063/1.3553878], Article, JOURNAL OF APPLIED PHYSICS. 109(5):54504 (2011)},
 title = {Effects of volatile additives in solutions used to prepare polythiophene-based thin-film transistors},
 volume = {109},
 year = {2011}
}