{"created":"2021-03-01T06:16:22.482025+00:00","id":13447,"links":{},"metadata":{"_buckets":{"deposit":"9b6a4cbe-76a9-478d-b889-91c6260ddbd8"},"_deposit":{"id":"13447","owners":[],"pid":{"revision_id":0,"type":"depid","value":"13447"},"status":"published"},"_oai":{"id":"oai:soar-ir.repo.nii.ac.jp:00013447","sets":["1309:1310"]},"author_link":["40970","40971","40972","40973","40974","40975","40976","40977"],"item_1628147817048":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_6_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-09","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"9","bibliographicPageEnd":"1554","bibliographicPageStart":"1549","bibliographicVolumeNumber":"11","bibliographic_titles":[{"bibliographic_title":"Organic Electronics"}]}]},"item_6_description_20":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We demonstrated the performance of thin-film transistors (TFTs) and single-crystal field-effect transistors (FETs) based on a trifluoromethyl-substituted alternating (thiophene/phenylene)-co-oligomer (AC5-CF3), 1,4-bis(5'-(4 ''-trifluoromethylphenyl)thiophene-2'-yl) benzene. An FET with a fine AC5-CF3 single-crystal demonstrated field-effect mobility as high as 3.1 cm(2) V-1 s(-1). This value implies that AC5-CF3 must be a useful n-type organic semiconducting material. The performance of AC5-CF3 TFTs depended on the substrate temperatures at which AC5-CF3 thin films were deposited. From the viewpoint of mobility, threshold voltage and sub-threshold slope, we obtained the highest performance at the substrate temperature of 100 degrees C. This was because a higher substrate temperature for deposition enlarged the size of grains in AC-CF3 thin films and improved the characteristics of grain boundaries. However, 120 degrees C depositions of AC5-CF3 induced deep valley-like cracks in the thin films, probably because of the difference between the coefficients of thermal expansion for AC5-CF3 thin films and silicon wafer substrates, resulting in effects such as worsening mobility. AC5-CF3 TFTs prepared at 100 degrees C deposition showed no channel length dependence of the field-effect mobility, and their average field-effect mobility was 0.55 +/- 0.05 cm(2) V-1 s(-1).","subitem_description_type":"Abstract"}]},"item_6_description_30":{"attribute_name":"資源タイプ（コンテンツの種類）","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_6_description_5":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"Organic Electronics. 11(9):1549-1554 (2010)","subitem_description_type":"Other"}]},"item_6_link_3":{"attribute_name":"信州大学研究者総覧へのリンク","attribute_value_mlt":[{"subitem_link_text":"Ichikawa, Musubu","subitem_link_url":"http://soar-rd.shinshu-u.ac.jp/profile/ja.WenUjFkV.html"},{"subitem_link_text":"Koyama, Toshiki","subitem_link_url":"http://soar-rd.shinshu-u.ac.jp/profile/ja.ZNkUjekV.html"},{"subitem_link_text":"Taniguchi, Yoshio","subitem_link_url":"http://soar-rd.shinshu-u.ac.jp/profile/ja.HCfpjekV.html"}]},"item_6_link_67":{"attribute_name":"WoS","attribute_value_mlt":[{"subitem_link_url":"http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000281519700011"}]},"item_6_publisher_4":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"ELSEVIER SCIENCE BV"}]},"item_6_relation_48":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1016/j.orgel.2010.06.010"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.orgel.2010.06.010","subitem_relation_type_select":"DOI"}}]},"item_6_rights_62":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2010 Elsevier B.V."}]},"item_6_source_id_35":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1566-1199","subitem_source_identifier_type":"ISSN"}]},"item_6_source_id_40":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11621763","subitem_source_identifier_type":"NCID"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ichikawa,  Musubu"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kato,  Tatsuya"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Uchino,  Tetsuro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tsuzuki,  Takeo"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Inoue,  Masamitsu"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jeon,  Hyeon-Gu"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Koyama,  Toshiki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Taniguchi,  Yoshio"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2015-09-28"}],"displaytype":"detail","filename":"Thin-film_single-crystal_transistors.pdf","filesize":[{"value":"519.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Thin-film_single-crystal_transistors.pdf","url":"https://soar-ir.repo.nii.ac.jp/record/13447/files/Thin-film_single-crystal_transistors.pdf"},"version_id":"b4355ffc-fd22-4b67-9ee7-fccf7a4fe44c"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Organic thin-film transistors","subitem_subject_scheme":"Other"},{"subitem_subject":"Organic field-effect transistors","subitem_subject_scheme":"Other"},{"subitem_subject":"n-Type semiconductors","subitem_subject_scheme":"Other"},{"subitem_subject":"Alternating co-oligomer (Thiophene/phenylene)-co-oligomer","subitem_subject_scheme":"Other"},{"subitem_subject":"Electron mobility","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Thin-film and single-crystal transistors based on a trifluoromethyl-substituted alternating (thiophene/phenylene)-co-oligomer","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Thin-film and single-crystal transistors based on a trifluoromethyl-substituted alternating (thiophene/phenylene)-co-oligomer","subitem_title_language":"en"}]},"item_type_id":"6","owner":"1","path":["1310"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2010-10-20"},"publish_date":"2010-10-20","publish_status":"0","recid":"13447","relation_version_is_last":true,"title":["Thin-film and single-crystal transistors based on a trifluoromethyl-substituted alternating (thiophene/phenylene)-co-oligomer"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-12-14T03:46:05.117808+00:00"}