@techreport{oai:soar-ir.repo.nii.ac.jp:00014503,
 author = {小山,  俊樹 and 市川,  結 and 谷口,  彬雄},
 month = {Mar},
 note = {A goal for this research is the realization of the organic semiconductor laser. In this year, a low threshold polymer semiconductor was searched. Active layers with thickness from 90 to 190 nm were formed by the spin coating from the polymer semiconductor POFP. As a tuning of pump wavelength, the pump wavelength dependence of the fluorescent spectrum monitored by wavelength of 550 nm that was the peak wavelength of ASE was investigated. It was proved that pump wavelength that emission intensity at 550 nm became the strongest was 400 nm. So, a titanium sapphire laser with the pulse width of 12.5ns was used for pumping at 400 nm. The ASE spectrum pumped at 400 nm and the pump power density dependence of the emission peak intensity were measured. It got the remarkably low threshold of 30 Wcm^<-2> remarkably when an ASE threshold was found from raising point of the emission peak intensity when the pump power was increased. This value is the lowest value with a un-dope film. When a film thickness dependence of the threshold was checked, it was proved that a film thickness of the lowest threshold was 165 nm. The possibility, of electric current pumping approached by this result's getting it. From now on, lasing of the lowest threshold will be made a next goal., Article, 先進ファイバー工学研究教育拠点研究成果報告書 11: 97-98(2005)},
 title = {15-4-4 : 有機光通信デバイスに関する研究 : フォトニック結晶有機レ-ザの作製と評価},
 year = {2005}
}