{"created":"2021-03-01T06:20:53.255425+00:00","id":17831,"links":{},"metadata":{"_buckets":{"deposit":"6329667e-1745-47a0-b822-3dce898d486d"},"_deposit":{"id":"17831","owners":[],"pid":{"revision_id":0,"type":"depid","value":"17831"},"status":"published"},"_oai":{"id":"oai:soar-ir.repo.nii.ac.jp:00017831","sets":["1221:1222"]},"author_link":["49783","49784","49785","49786","49787","49788","49789","49790"],"item_1628147817048":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_6_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2015-09","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"319","bibliographicPageStart":"312","bibliographicVolumeNumber":"140","bibliographic_titles":[{"bibliographic_title":"SOLAR ENERGY MATERIALS AND SOLAR CELLS"}]}]},"item_6_description_20":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Cu2Sn1-xGexS3 thin-film absorbers are prepared by sulfurization of laminated precursors. The crystal grain size is enhanced under higher growth temperature and/or sulfur pressure. By the XRD and Raman analyses, the crystal alloy is considered to be composed of majority monoclinic phase with minority secondary phase such as Cu-2(Sn1-xGex)(3)S-7 throughout the whole Ge/(Ge+Sn) composition range. The optical band gap is observed to be varied between 0.94 eV and 1.30 eV in relation with the Ge contents. A photovoltaic conversion efficiency of about 2% is obtained in the sample utilizing Cu2Sn0.6Ge0.4S3 absorber. (C) 2015 Elsevier B.V. All rights reserved.","subitem_description_type":"Abstract"}]},"item_6_description_30":{"attribute_name":"資源タイプ（コンテンツの種類）","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_6_description_5":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"SOLAR ENERGY MATERIALS AND SOLAR CELLS. 140:312-319 (2015)","subitem_description_type":"Other"}]},"item_6_link_3":{"attribute_name":"信州大学研究者総覧へのリンク","attribute_value_mlt":[{"subitem_link_text":"Myo, Than Htay","subitem_link_url":"http://soar-rd.shinshu-u.ac.jp/profile/ja.ZpTFbpkh.html"},{"subitem_link_text":"Taishi, Toshinori","subitem_link_url":"http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html"},{"subitem_link_text":"Hashimoto, Yoshio","subitem_link_url":"http://soar-rd.shinshu-u.ac.jp/profile/ja.gUTUZVkh.html"}]},"item_6_link_67":{"attribute_name":"WoS","attribute_value_mlt":[{"subitem_link_url":"http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000356746800041"}]},"item_6_publisher_4":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"ELSEVIER SCIENCE BV"}]},"item_6_relation_48":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1016/j.solmat.2015.04.030"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.solmat.2015.04.030","subitem_relation_type_select":"DOI"}}]},"item_6_rights_62":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2015. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ "}]},"item_6_source_id_35":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0927-0248","subitem_source_identifier_type":"ISSN"}]},"item_6_source_id_40":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA10827286","subitem_source_identifier_type":"NCID"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Myo, Than Htay"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Mandokoro,  Takahiro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Seki,  Hiroaki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sakaizawa,  Takanori"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Momose,  Noritaka"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Taishi,  Toshinori"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hashimoto,  Yoshio"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ito,  Kentaro"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-09-01"}],"displaytype":"detail","filename":"Influence_Ge_composition_Cu2Sn1-xGexS3_thin-film.pdf","filesize":[{"value":"11.9 MB"}],"format":"application/pdf","licensefree":"© 2015. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Influence_Ge_composition_Cu2Sn1-xGexS3_thin-film.pdf","url":"https://soar-ir.repo.nii.ac.jp/record/17831/files/Influence_Ge_composition_Cu2Sn1-xGexS3_thin-film.pdf"},"version_id":"4a4025ac-5f53-4b17-82cb-a7db9fe08841"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Cu2Sn1-xGexS3","subitem_subject_scheme":"Other"},{"subitem_subject":"Sulfurization","subitem_subject_scheme":"Other"},{"subitem_subject":"Thin film","subitem_subject_scheme":"Other"},{"subitem_subject":"Raman spectrum","subitem_subject_scheme":"Other"},{"subitem_subject":"Compound semiconductor","subitem_subject_scheme":"Other"},{"subitem_subject":"Solar cell","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor","subitem_title_language":"en"}]},"item_type_id":"6","owner":"1","path":["1222"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-02-03"},"publish_date":"2016-02-03","publish_status":"0","recid":"17831","relation_version_is_last":true,"title":["Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-12-14T04:12:27.826812+00:00"}