@article{oai:soar-ir.repo.nii.ac.jp:00018466, author = {Akahane, Yoshiyuki and Kimura, Kyosuke and Kano, Takuo and Watanabe, Yukimune and Yamakami, Tomohiko and Fujimaki, Shinji and Kamimura, Kiichi}, journal = {Materials Science Forum}, month = {Jun}, note = {The mixed gas of nitrogen and hydrogen was used for the plasma nitridation of SiC surface.A small amount of hydrogen was effective to activate the nitridation reaction and suppress the oxidationreaction. The interface properties were improved by using nitride layer as an interfacial bufferlayer of SiC MIS structure., Article, Materials Science Forum, Vols. 821-823, pp. 504-507 (2015)}, pages = {504--507}, title = {Plasma Nitridation of 4H-SiC by Glow Discharge of N2/H2 Mixed Gases}, volume = {821-823}, year = {2015} }