{"created":"2021-03-01T06:21:31.573071+00:00","id":18466,"links":{},"metadata":{"_buckets":{"deposit":"ae2c4997-153f-4732-8eea-7dc7f9f9d970"},"_deposit":{"id":"18466","owners":[],"pid":{"revision_id":0,"type":"depid","value":"18466"},"status":"published"},"_oai":{"id":"oai:soar-ir.repo.nii.ac.jp:00018466","sets":["1221:1222"]},"author_link":["51435","51436","51437","51438","51439","51440","51441"],"item_1628147817048":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_6_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2015-06","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"507","bibliographicPageStart":"504","bibliographicVolumeNumber":"821-823","bibliographic_titles":[{"bibliographic_title":"Materials Science Forum"}]}]},"item_6_description_20":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The mixed gas of nitrogen and hydrogen was used for the plasma nitridation of SiC surface.A small amount of hydrogen was effective to activate the nitridation reaction and suppress the oxidationreaction. The interface properties were improved by using nitride layer as an interfacial bufferlayer of SiC MIS structure.","subitem_description_type":"Abstract"}]},"item_6_description_30":{"attribute_name":"資源タイプ（コンテンツの種類）","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_6_description_5":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"Materials Science Forum, Vols. 821-823, pp. 504-507 (2015)","subitem_description_type":"Other"}]},"item_6_link_3":{"attribute_name":"信州大学研究者総覧へのリンク","attribute_value_mlt":[{"subitem_link_text":"Kamimura, Kiichi","subitem_link_url":"http://soar-rd.shinshu-u.ac.jp/profile/ja.yVkaZVkh.html"}]},"item_6_publisher_4":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Trans Tech Publications"}]},"item_6_relation_48":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.4028/www.scientific.net/MSF.821-823.504"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.4028/www.scientific.net/MSF.821-823.504","subitem_relation_type_select":"DOI"}}]},"item_6_rights_62":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2015 Trans Tech Publications, Switzerland"}]},"item_6_source_id_35":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1662-9752 ","subitem_source_identifier_type":"ISSN"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Akahane, Yoshiyuki"}],"nameIdentifiers":[{"nameIdentifier":"51435","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kimura, Kyosuke"}],"nameIdentifiers":[{"nameIdentifier":"51436","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kano, Takuo"}],"nameIdentifiers":[{"nameIdentifier":"51437","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Watanabe, Yukimune"}],"nameIdentifiers":[{"nameIdentifier":"51438","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamakami, Tomohiko"}],"nameIdentifiers":[{"nameIdentifier":"51439","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fujimaki, Shinji"}],"nameIdentifiers":[{"nameIdentifier":"51440","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kamimura, Kiichi"}],"nameIdentifiers":[{"nameIdentifier":"51441","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-10-14"}],"displaytype":"detail","filename":"Plasma_Nitridation_of_4H-SiC.pdf","filesize":[{"value":"316.2 kB"}],"format":"application/pdf","licensefree":"© 2015 Trans Tech Publications, Switzerland","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Plasma_Nitridation_of_4H-SiC.pdf","url":"https://soar-ir.repo.nii.ac.jp/record/18466/files/Plasma_Nitridation_of_4H-SiC.pdf"},"version_id":"81fdf915-2e24-4ebf-87c9-867afaf75701"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Nitride","subitem_subject_scheme":"Other"},{"subitem_subject":"MIS","subitem_subject_scheme":"Other"},{"subitem_subject":"plasma","subitem_subject_scheme":"Other"},{"subitem_subject":"SiC","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Plasma Nitridation of 4H-SiC by Glow Discharge of N2/H2 Mixed Gases","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Plasma Nitridation of 4H-SiC by Glow Discharge of N2/H2 Mixed Gases","subitem_title_language":"en"}]},"item_type_id":"6","owner":"1","path":["1222"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-10-14"},"publish_date":"2016-10-14","publish_status":"0","recid":"18466","relation_version_is_last":true,"title":["Plasma Nitridation of 4H-SiC by Glow Discharge of N2/H2 Mixed Gases"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-12-14T04:05:54.862868+00:00"}