{"created":"2021-03-01T06:21:33.836077+00:00","id":18502,"links":{},"metadata":{"_buckets":{"deposit":"439d9e38-e6a6-4218-97f4-e7e99dfc6966"},"_deposit":{"id":"18502","owners":[],"pid":{"revision_id":0,"type":"depid","value":"18502"},"status":"published"},"_oai":{"id":"oai:soar-ir.repo.nii.ac.jp:00018502","sets":["1221:1222"]},"author_link":["51539","51540","51541","51542","51543","51544","51545"],"item_1628147817048":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_6_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2014-02","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"634","bibliographicPageStart":"631","bibliographicVolumeNumber":"778-780","bibliographic_titles":[{"bibliographic_title":"Materials Science Forum"}]}]},"item_6_description_20":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"A nitride layer was formed on a SiC surface by plasma nitridation using pure nitrogen as the reaction gas at the temperature from 800°C to 1400°C. The surface was characterized by XPS. The XPS measurement showed that an oxinitride layer was formed on the SiC surface by the plasma nitridation. The high process temperature seemed to be effective to activate the niridation reaction. A SiO2 film was deposited on the nitridation layer to form SiO2/nitride/SiC structure. The interface state density of the SiO2/nitride/SiC structure was lower than that of the SiO2/SiC structure. This suggested that the nitridation was effective to improve the interface property. ","subitem_description_type":"Abstract"}]},"item_6_description_30":{"attribute_name":"資源タイプ（コンテンツの種類）","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_6_description_5":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"Materials Science Forum, Vols. 778-780, pp. 631-634 (2014)","subitem_description_type":"Other"}]},"item_6_link_3":{"attribute_name":"信州大学研究者総覧へのリンク","attribute_value_mlt":[{"subitem_link_text":"Kamimura, Kiichi","subitem_link_url":"http://soar-rd.shinshu-u.ac.jp/profile/ja.yVkaZVkh.html"}]},"item_6_publisher_4":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Trans Tech Publications"}]},"item_6_relation_48":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.4028/www.scientific.net/MSF.778-780.631"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.4028/www.scientific.net/MSF.778-780.631","subitem_relation_type_select":"DOI"}}]},"item_6_rights_62":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2014 Trans Tech Publications, Switzerland"}]},"item_6_source_id_35":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1662-9752 ","subitem_source_identifier_type":"ISSN"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Akahane, Yoshiyuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kano, Takuo"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kimura, Kyosuke"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Komatsu, Hiroki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Watanabe, Yukimune"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yamakami, Tomohiko"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kamimura  Kiichi"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-11-01"}],"displaytype":"detail","filename":"MSF778-780_pp631-634.pdf","filesize":[{"value":"524.1 kB"}],"format":"application/pdf","licensefree":"© 2014 Trans Tech Publications, Switzerland","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"MSF778-780_pp631-634.pdf","url":"https://soar-ir.repo.nii.ac.jp/record/18502/files/MSF778-780_pp631-634.pdf"},"version_id":"8b0d2093-2e44-4a12-ac05-9cf4b8c34735"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"MIS","subitem_subject_scheme":"Other"},{"subitem_subject":"Nitride","subitem_subject_scheme":"Other"},{"subitem_subject":"TEOS","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation","subitem_title_language":"en"}]},"item_type_id":"6","owner":"1","path":["1222"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-11-01"},"publish_date":"2016-11-01","publish_status":"0","recid":"18502","relation_version_is_last":true,"title":["Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-12-14T04:13:04.190280+00:00"}