{"created":"2021-03-01T06:21:33.899849+00:00","id":18503,"links":{},"metadata":{"_buckets":{"deposit":"dce632f4-f14f-48e1-a03c-074a2462ddcd"},"_deposit":{"id":"18503","owners":[],"pid":{"revision_id":0,"type":"depid","value":"18503"},"status":"published"},"_oai":{"id":"oai:soar-ir.repo.nii.ac.jp:00018503","sets":["1221:1222"]},"author_link":["51546","51547","51548","51549","51550"],"item_1628147817048":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_6_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-01","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"808","bibliographicPageStart":"805","bibliographicVolumeNumber":"740-742","bibliographic_titles":[{"bibliographic_title":"Materials Science Forum"}]}]},"item_6_description_20":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The SiO2 layer was deposited on the 4H-SiC Si face by the thermal decomposition of tetraethylorthosilicate(TEOS) in N2 atmosphere to from MIS diodes. The post deposition annealing was effective to improve the interface properties. The interface state density of the deposited SiO2/SiC MIS structure was estimated to be the order of 1011 cm-2eV-1 by Terman method. The direct nitridation of SiC surface prior to the deposition of the SiO2 layer was effective to reduce the interface state density. ","subitem_description_type":"Abstract"}]},"item_6_description_30":{"attribute_name":"資源タイプ（コンテンツの種類）","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_6_description_5":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"Materials Science Forum, Vols. 740-742, pp. 805-808 (2013)","subitem_description_type":"Other"}]},"item_6_link_3":{"attribute_name":"信州大学研究者総覧へのリンク","attribute_value_mlt":[{"subitem_link_text":"Kamimura, Kiichi","subitem_link_url":"http://soar-rd.shinshu-u.ac.jp/profile/ja.yVkaZVkh.html"}]},"item_6_publisher_4":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Trans Tech Publications"}]},"item_6_relation_48":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.4028/www.scientific.net/MSF.740-742.805"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.4028/www.scientific.net/MSF.740-742.805","subitem_relation_type_select":"DOI"}}]},"item_6_rights_62":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2013 Trans Tech Publications, Switzerland"}]},"item_6_source_id_35":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1662-9752 ","subitem_source_identifier_type":"ISSN"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hemmi, Mitsunori"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sakai, Takashi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yamakami, Tomohiko"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hayashibe, Rinpei"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kamimura, Kiichi"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-11-01"}],"displaytype":"detail","filename":"MSF740-742_pp805-808.pdf","filesize":[{"value":"742.3 kB"}],"format":"application/pdf","licensefree":"© 2013 Trans Tech Publications, Switzerland","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"MSF740-742_pp805-808.pdf","url":"https://soar-ir.repo.nii.ac.jp/record/18503/files/MSF740-742_pp805-808.pdf"},"version_id":"89f7c516-b632-4f17-99f4-f2159f5aeb08"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO2/SiC MIS Structure","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO2/SiC MIS Structure","subitem_title_language":"en"}]},"item_type_id":"6","owner":"1","path":["1222"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-11-01"},"publish_date":"2016-11-01","publish_status":"0","recid":"18503","relation_version_is_last":true,"title":["Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO2/SiC MIS Structure"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-12-14T04:13:04.288855+00:00"}