@article{oai:soar-ir.repo.nii.ac.jp:00019574,
 author = {Tomita, Toshihiro and Miyaji, Kousuke},
 issue = {4},
 journal = {JAPANESE JOURNAL OF APPLIED PHYSICS},
 month = {},
 note = {The dependence of spatial and statistical distribution of random telegraph noise (RTN) in a 30 nm NAND flash memory on channel doping concentration N-A and cell program state V-th is comprehensively investigated using three-dimensional Monte Carlo device simulation considering random dopant fluctuation (RDF). It is found that single trap RTN amplitude Delta V-th is larger at the center of the channel region in the NAND flash memory, which is closer to the jellium (uniform) doping results since N-A is relatively low to suppress junction leakage current. In addition, Delta V-th peak at the center of the channel decreases in the higher V-th state due to the current concentration at the shallow trench isolation (STI) edges induced by the high vertical electrical field through the fringing capacitance between the channel and control gate. In such cases, Delta V-th distribution slope. cannot be determined by only considering RDF and single trap. (C) 2015 The Japan Society of Applied Physics, Article, JAPANESE JOURNAL OF APPLIED PHYSICS. 54(4): 04DD02 (2015)},
 title = {Channel doping concentration and cell program state dependence on random telegraph noise spatial and statistical distribution in 30 nm NAND flash memory},
 volume = {54},
 year = {2015}
}