{"created":"2021-03-01T06:22:58.487760+00:00","id":19872,"links":{},"metadata":{"_buckets":{"deposit":"45e73f83-447f-4aa1-86fd-282b11c88006"},"_deposit":{"id":"19872","owners":[],"pid":{"revision_id":0,"type":"depid","value":"19872"},"status":"published"},"_oai":{"id":"oai:soar-ir.repo.nii.ac.jp:00019872","sets":["1169:1170"]},"author_link":["105674","105675","105676"],"item_1628147817048":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_6_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2015-02-23","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageStart":"075122","bibliographicVolumeNumber":"91","bibliographic_titles":[{"bibliographic_title":"PHYSICAL REVIEW B"}]}]},"item_6_description_20":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We present a relativistic tight-binding (TB) approximation method that is applicable to actual crystalline materials immersed in a uniform magnetic field. The magnetic Bloch theorem is used to make the dimensions of the Hamiltonian matrix finite. In addition, by means of the perturbation theory, the magnetic hopping integral that appears in the Hamiltonian matrix is reasonably approximated as the relativistic hopping integral multiplied by the magnetic-field-dependent phase factor. In order to calculate the relativistic hopping integral, the relativistic version of the so-called Slater-Koster table is also given in an explicit form. We apply the present method to crystalline silicon immersed in a uniform magnetic field, and reveal its energy-band structure that is defined in the magnetic first Brillouin zone. It is found that the widths of energy-bands increase with increasing the magnetic field, which indicates the magnetic-field dependence of the appropriateness of the effective mass approximation. The recursive energy spectrum, which is the so-called butterfly diagram, can also be seen in the k-space plane perpendicular to the magnetic field.","subitem_description_type":"Abstract"}]},"item_6_description_30":{"attribute_name":"資源タイプ（コンテンツの種類）","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_6_description_5":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"PHYSICAL REVIEW B. 91(7):075122 (2015)","subitem_description_type":"Other"}]},"item_6_link_3":{"attribute_name":"信州大学研究者総覧へのリンク","attribute_value_mlt":[{"subitem_link_text":"Higuchi, Masahiko","subitem_link_url":"http://soar-rd.shinshu-u.ac.jp/profile/ja.gVfUPeSe.html"}]},"item_6_link_67":{"attribute_name":"WoS","attribute_value_mlt":[{"subitem_link_url":"http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000351775200002"}]},"item_6_publisher_4":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AMER PHYSICAL SOC"}]},"item_6_relation_48":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1103/PhysRevB.91.075122"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1103/PhysRevB.91.075122","subitem_relation_type_select":"DOI"}}]},"item_6_rights_62":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"©2015 American Physical Society"}]},"item_6_source_id_35":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1098-0121","subitem_source_identifier_type":"ISSN"}]},"item_6_source_id_40":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11187113","subitem_source_identifier_type":"NCID"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Higuchi, Katsuhiko"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hamal, Dipendra Bahadur"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Higuchi, Masahiko"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-05-24"}],"displaytype":"detail","filename":"PhysRevB.91.075122.pdf","filesize":[{"value":"5.7 MB"}],"format":"application/pdf","licensefree":"©2015 American Physical Society","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"PhysRevB.91.075122.pdf","url":"https://soar-ir.repo.nii.ac.jp/record/19872/files/PhysRevB.91.075122.pdf"},"version_id":"54a5ebbf-8558-4d72-b9f3-d01a924f7941"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Relativistic tight-binding approximation method for materials immersed in a uniform magnetic field: Application to crystalline silicon","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Relativistic tight-binding approximation method for materials immersed in a uniform magnetic field: Application to crystalline silicon","subitem_title_language":"en"}]},"item_type_id":"6","owner":"1","path":["1170"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2018-05-24"},"publish_date":"2018-05-24","publish_status":"0","recid":"19872","relation_version_is_last":true,"title":["Relativistic tight-binding approximation method for materials immersed in a uniform magnetic field: Application to crystalline silicon"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-12-14T04:16:28.081163+00:00"}