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50 mm diameter Sn-doped (001) beta-Ga2O3 crystal growth using the vertical Bridgeman technique in ambient air
http://hdl.handle.net/10091/00022283
http://hdl.handle.net/10091/000222830b05d31f-399f-4d90-ac1b-bb533fe3fce9
名前 / ファイル | ライセンス | アクション |
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J_CrystGrowth546-125778.pdf (1.1 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2020-10-14 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | 50 mm diameter Sn-doped (001) beta-Ga2O3 crystal growth using the vertical Bridgeman technique in ambient air | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題 | X-ray topograph, Doping, Bridgman technique, Single crystal growth, Oxides, Semiconducting beta-Ga2O3 | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Hoshikawa, K
× Hoshikawa, K× Kobayashi, T× Ohba, E |
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出版者 | ||||||
出版者 | ELSEVIER | |||||
引用 | ||||||
内容記述タイプ | Other | |||||
内容記述 | JOURNAL OF CRYSTAL GROWTH.546:125778(2020) | |||||
書誌情報 |
JOURNAL OF CRYSTAL GROWTH 巻 546, p. 125778, 発行日 2020-09-15 |
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内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Available online 3 July 2020 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | 50 mm-diameter Sn-doped beta-Ga2O3 crystals with growth orientation perpendicular to (001) plane were grown with the newly-developed resistance heating vertical Bridgeman furnace using platinum-rhodium alloy crucibles in ambient air. Weak low angle grain boundaries and several small grains were detected on the both-side mirror polished 50 mm-diameter (001) wafer, using high resolution refraction x-ray topography. However, no imperfections were observed over the whole wafer area when using crossed polarizer analysis. Measured values of both the full width at half maximum and the dislocation densities were widely distributed in the wafer, ranging from 10 to 50 arcsec and 100 to 2000/cm(2) respectively with no distinctive correlations among them. The Sndoped crystals with concentrations ranging from 5 x 10(17) to 5 x 10(18) atom/cm(3) could be grown by Sn-doping in a range from 0.05 to 0.1 mol%, and (001) oriented, 50 mm-diameter n-type oxide semiconductor wafers with a carrier density of 3.6 x 10(18)/cm(3), a mobility of 60 cm(2)/Vsec and a resistivity of 0.03 Omega.cm, were obtained from a 0.1 mol% Sn-doped crystal. | |||||
資源タイプ(コンテンツの種類) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Article | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0022-0248 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00696341 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.jcrysgro.2020.125778 | |||||
関連名称 | 10.1016/j.jcrysgro.2020.125778 | |||||
権利 | ||||||
権利情報 | © 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
WoS | ||||||
表示名 | Web of Science | |||||
URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000557891200001 |