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  1. 060 工学部
  2. 0601 学術論文

50 mm diameter Sn-doped (001) beta-Ga2O3 crystal growth using the vertical Bridgeman technique in ambient air

http://hdl.handle.net/10091/00022283
0b05d31f-399f-4d90-ac1b-bb533fe3fce9
名前 / ファイル ライセンス アクション
J_CrystGrowth546-125778.pdf J_CrystGrowth546-125778.pdf (1.1 MB)
 Download is available from 2022/7/2.
Item type 学術雑誌論文 / Journal Article(1)
公開日 2020-10-14
タイトル
言語 en
タイトル 50 mm diameter Sn-doped (001) beta-Ga2O3 crystal growth using the vertical Bridgeman technique in ambient air
言語
言語 eng
キーワード
主題Scheme Other
主題 X-ray topograph
キーワード
主題Scheme Other
主題 Doping
キーワード
主題Scheme Other
主題 Bridgman technique
キーワード
主題Scheme Other
主題 Single crystal growth
キーワード
主題Scheme Other
主題 Oxides
キーワード
主題Scheme Other
主題 Semiconducting beta-Ga2O3
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
著者 Hoshikawa, K

× Hoshikawa, K

WEKO 109822

Hoshikawa, K

Search repository
Kobayashi, T

× Kobayashi, T

WEKO 109823

Kobayashi, T

Search repository
Ohba, E

× Ohba, E

WEKO 109824

Ohba, E

Search repository
出版者
出版者 ELSEVIER
引用
内容記述タイプ Other
内容記述 JOURNAL OF CRYSTAL GROWTH.546:125778(2020)
書誌情報 JOURNAL OF CRYSTAL GROWTH

巻 546, p. 125778, 発行日 2020-09-15
内容記述
内容記述タイプ Other
内容記述 Available online 3 July 2020
抄録
内容記述タイプ Abstract
内容記述 50 mm-diameter Sn-doped beta-Ga2O3 crystals with growth orientation perpendicular to (001) plane were grown with the newly-developed resistance heating vertical Bridgeman furnace using platinum-rhodium alloy crucibles in ambient air. Weak low angle grain boundaries and several small grains were detected on the both-side mirror polished 50 mm-diameter (001) wafer, using high resolution refraction x-ray topography. However, no imperfections were observed over the whole wafer area when using crossed polarizer analysis. Measured values of both the full width at half maximum and the dislocation densities were widely distributed in the wafer, ranging from 10 to 50 arcsec and 100 to 2000/cm(2) respectively with no distinctive correlations among them. The Sndoped crystals with concentrations ranging from 5 x 10(17) to 5 x 10(18) atom/cm(3) could be grown by Sn-doping in a range from 0.05 to 0.1 mol%, and (001) oriented, 50 mm-diameter n-type oxide semiconductor wafers with a carrier density of 3.6 x 10(18)/cm(3), a mobility of 60 cm(2)/Vsec and a resistivity of 0.03 Omega.cm, were obtained from a 0.1 mol% Sn-doped crystal.
資源タイプ(コンテンツの種類)
内容記述タイプ Other
内容記述 Article
ISSN
収録物識別子タイプ ISSN
収録物識別子 0022-0248
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA00696341
DOI
関連識別子
識別子タイプ DOI
関連識別子 https://doi.org/10.1016/j.jcrysgro.2020.125778
関連名称
関連名称 10.1016/j.jcrysgro.2020.125778
権利
権利情報 © 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
WoS
表示名 Web of Science
URL http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000557891200001
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