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Wall-to-wall stress induced in (6,5) semiconducting nanotubes by encapsulation in metallic outer tubes of different diameters: A resonance Raman study of individual C(60)-derived double-wall carbon nanotubes
http://hdl.handle.net/10091/13663
http://hdl.handle.net/10091/136636d4b64b0-6935-46a8-bdce-afb4901d8592
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-03-02 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Wall-to-wall stress induced in (6,5) semiconducting nanotubes by encapsulation in metallic outer tubes of different diameters: A resonance Raman study of individual C(60)-derived double-wall carbon nanotubes | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Villalpando-Paez, Federico
× Villalpando-Paez, Federico× Muramatsu, Hiroyuki× Kim, Yoong Ahm× Farhat, Hootan× Endo, Morinobu× Terrones, Mauricio× Dresselhaus, Mildred S |
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信州大学研究者総覧へのリンク | ||||||
氏名 | Endo, Morinobu | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.uUTmZhkh.html | |||||
出版者 | ||||||
出版者 | ROYAL SOC CHEMISTRY | |||||
引用 | ||||||
内容記述タイプ | Other | |||||
内容記述 | NANOSCALE. 2(3):406-411 (2010) | |||||
書誌情報 |
NANOSCALE 巻 2, 号 3, p. 406-411, 発行日 2010 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We measure resonant Raman scattering from 11 individual C(60)-derived double-wall carbon nanotubes all having inner semiconducting (6,5) tubes and various outer metallic tubes. The Raman spectra show the radial breathing modes (RBM) of the inner and the outer tubes to be simultaneously in resonance with the same laser energy. We observe that an increase in the RBM frequency of the inner tubes is related to an increase in the RBM frequency of the outer tubes. The Raman spectra also contain a sharp G(-) feature that increases in frequency as the nominal diameter of the outer metallic tubes decreases. Finally, the one-phonon second-order D-band mode shows a two-way frequency splitting that decreases with decreasing nominal wall-to-wall distance. We suggest that the stress which increases with decreasing nominal wall-to-wall distance is responsible for the hardening that is observed in the frequencies of the RBM, D and G(-) modes of the inner (6,5) semiconducting tubes. | |||||
資源タイプ(コンテンツの種類) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Article | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 2040-3364 | |||||
PubMed | ||||||
識別子タイプ | PMID | |||||
関連識別子 | http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?CMD=search&DB=pubmed&term=20644824 | |||||
関連名称 | 20644824 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1039/b9nr00268e | |||||
関連名称 | 10.1039/b9nr00268e | |||||
権利 | ||||||
権利情報 | Nanoscale, 2010,2, 406-411 - Reproduced by permission of The Royal Society of Chemistry | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
WoS | ||||||
表示名 | Web of Science | |||||
URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000275382900012 |