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Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in JOURNAL OF APPLIED PHYSICS. 107(9):09E718 (2010) and may be found at https://doi.org/10.1063/1.3362902 .", "subitem_description_type": "Other"}]}, "item_6_description_20": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "A strain sensor using a stress-magnetoresistance effect of a Ni-Fe/Mn-Ir exchange-coupled magnetic film was fabricated and evaluated. The stress magnetoresistance is used in the inverse magnetostrictive effect and the magnetoresistance effect in the magnetic film since an external stress is changed into an electric resistance in it. A compressive stress was measured by the strain sensor with a Mn-Ir (10 nm)/Ni-Fe (50 nm)/Ru (1 nm) exchange-coupled film. The change in resistivity Delta rho/rho is proportional to the applied compressive stress sigma for sigma \u003c= 50 MPa in the strain sensor. 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The stress magnetoresistance is used in the inverse magnetostrictive effect and the magnetoresistance effect in the magnetic film since an external stress is changed into an electric resistance in it. A compressive stress was measured by the strain sensor with a Mn-Ir (10 nm)/Ni-Fe (50 nm)/Ru (1 nm) exchange-coupled film. The change in resistivity Delta rho/rho is proportional to the applied compressive stress sigma for sigma \u003c= 50 MPa in the strain sensor. When increasing Ni-Fe layer thickness in the strain sensor, a gauge factor increased. (C) 2010 American Institute of Physics. 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