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The stress magnetoresistance is used in the inverse magnetostrictive effect and the magnetoresistance effect in the magnetic film since an external stress is changed into an electric resistance in it. A compressive stress was measured by the strain sensor with a Mn-Ir (10 nm)/Ni-Fe (50 nm)/Ru (1 nm) exchange-coupled film. The change in resistivity Delta rho/rho is proportional to the applied compressive stress sigma for sigma \u003c= 50 MPa in the strain sensor. When increasing Ni-Fe layer thickness in the strain sensor, a gauge factor increased. (C) 2010 American Institute of Physics. 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