{"_buckets": {"deposit": "2e5ec662-56ae-4a8b-8ac1-5208e6b3ca27"}, "_deposit": {"id": "13077", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "13077"}, "status": "published"}, "_oai": {"id": "oai:soar-ir.repo.nii.ac.jp:00013077", "sets": []}, "author_link": ["39925"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1967-12-25", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "103", "bibliographicPageStart": "97", "bibliographicVolumeNumber": "23", "bibliographic_titles": [{"bibliographic_title": "信州大学工学部紀要"}]}]}, "item_10_description_20": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Amorphous Ge film, vacuum-evaporated on glass substrates, is known as a sort of semi-conductor. The present thesis is intended to investigate the influences of film thickness and impurities on its electrical resistivity as well as the temperature dependence of the resistivity, and following conclusions are drawn ; It (i.e., resistivity of amorphous Ge film) is independent of the thickness of the film within the range of 200-1000A. It is also independent of the vacuum ambients when film is produced in the vacuum of 10⁻⁹-10⁻⁷ Torr, though it grows higher when produced in 10⁻⁴ Torr owing to the incorporation of residual gases. It is rather insensitive to the addition of impurities such as Al, In and Sb below 1 atomic per cent. The temperature dependence of resistivity of pure, well-annealed amorphous Ge film was measured (below amorphous-crystalline transition temperature). And it is found that the activation energy for the electrical conduction amounts to 1.0 eV. This is to be interpreted in terms of the energy band gap broader than in the case of crystalline Ge.", "subitem_description_type": "Abstract"}]}, "item_10_description_30": {"attribute_name": "資源タイプ（コンテンツの種類）", "attribute_value_mlt": [{"subitem_description": "Article", "subitem_description_type": "Other"}]}, "item_10_description_31": {"attribute_name": "フォーマット：mimeタイプ", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_10_description_5": {"attribute_name": "引用", "attribute_value_mlt": [{"subitem_description": "信州大学工学部紀要 23: 97-103 (1967)", "subitem_description_type": "Other"}]}, "item_10_publisher_4": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "信州大学工学部"}]}, "item_10_select_64": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_35": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0037-3818", "subitem_source_identifier_type": "ISSN"}]}, "item_10_source_id_39": {"attribute_name": "NII ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0037-3818", "subitem_source_identifier_type": "ISSN"}]}, "item_10_source_id_40": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AN00121228", "subitem_source_identifier_type": "NCID"}]}, "item_10_text_66": {"attribute_name": "sortkey", "attribute_value_mlt": [{"subitem_text_value": "05"}]}, "item_1627890569677": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "伊東,  謙太郎", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "39925", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2015-09-28"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "Engineering23-05.pdf", "filesize": [{"value": "408.9 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 408900.0, "url": {"label": "Engineering23-05.pdf", "url": "https://soar-ir.repo.nii.ac.jp/record/13077/files/Engineering23-05.pdf"}, "version_id": "caeccf06-25ed-45a5-bc00-b6a8a7863a42"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "departmental bulletin paper", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "非晶質 Ge 膜の電気的特質", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "非晶質 Ge 膜の電気的特質", "subitem_title_language": "ja"}, {"subitem_title": "Electrical Properties of Amorphous Ge\u0027 Films", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["1284"], "permalink_uri": "http://hdl.handle.net/10091/2882", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2009-03-30"}, "publish_date": "2009-03-30", "publish_status": "0", "recid": "13077", "relation": {}, "relation_version_is_last": true, "title": ["非晶質 Ge 膜の電気的特質"], "weko_shared_id": -1}