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Wet-processed n-type OTFTs utilizing highly-stable colloids of a perylene diimide derivative
http://hdl.handle.net/10091/16168
http://hdl.handle.net/10091/16168ce43ff67-089f-4648-a59a-d54da022c12e
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2013-01-08 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Wet-processed n-type OTFTs utilizing highly-stable colloids of a perylene diimide derivative | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Colloid | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Wet-process | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Nanoparticle | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Laser ablation | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | PTCDI | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | OTFT | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Jeona, Hyeon-Gu
× Jeona, Hyeon-Gu× Oguma, Naomi× Hirata, Naoki× Ichikawa, Musubu |
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信州大学研究者総覧へのリンク | ||||||
氏名 | Ichikawa, Musubu | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.WenUjFkV.html | |||||
出版者 | ||||||
出版者 | ELSEVIER SCIENCE BV | |||||
引用 | ||||||
内容記述タイプ | Other | |||||
内容記述 | ORGANIC ELECTRONICS. 14(1):19-25 (2013) | |||||
書誌情報 |
ORGANIC ELECTRONICS 巻 14, 号 1, p. 19-25, 発行日 2013-01 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Here we propose and demonstrate a new approach to wet-processed organic thin-film transistors utilizing highly-stable colloids of small molecular organic semiconductors prepared by laser ablation technique. Highly stable N,N′-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) colloids of 0.1 wt% concentration were prepared successfully by laser ablation technique in acetonitrile. Mean particle size of the prepared PTCDI-C13 colloid measured by dynamic light scattering method was smaller than 50 nm which is also confirmed by a transmission electron microscope observation. By simple drop-casting of prepared PTCDI-C13 colloids, typical n-type OTFTs with good saturation properties were fabricated successfully. The highest electron mobility was 1.1 × 10−3 cm2/Vs and increased up to 0.027 cm2/Vs by post-annealing treatment. | |||||
資源タイプ(コンテンツの種類) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Article | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1566-1199 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11621763 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.orgel.2012.10.024 | |||||
関連名称 | 10.1016/j.orgel.2012.10.024 | |||||
権利 | ||||||
権利情報 | Copyright© 2013 Elsevier B.V. | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
WoS | ||||||
表示名 | Web of Science | |||||
URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000313686200003 |