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  1. 080 繊維学部
  2. 0801 学術論文

Wet-processed n-type OTFTs utilizing highly-stable colloids of a perylene diimide derivative

http://hdl.handle.net/10091/16168
http://hdl.handle.net/10091/16168
ce43ff67-089f-4648-a59a-d54da022c12e
名前 / ファイル ライセンス アクション
Wet-processed Wet-processed n-type OTFTs utilizing highly-stable colloids of a perylene diimide derivative.pdf (1.7 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2013-01-08
タイトル
言語 en
タイトル Wet-processed n-type OTFTs utilizing highly-stable colloids of a perylene diimide derivative
言語
言語 eng
キーワード
主題Scheme Other
主題 Colloid
キーワード
主題Scheme Other
主題 Wet-process
キーワード
主題Scheme Other
主題 Nanoparticle
キーワード
主題Scheme Other
主題 Laser ablation
キーワード
主題Scheme Other
主題 PTCDI
キーワード
主題Scheme Other
主題 OTFT
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
著者 Jeona, Hyeon-Gu

× Jeona, Hyeon-Gu

WEKO 40712

Jeona, Hyeon-Gu

Search repository
Oguma, Naomi

× Oguma, Naomi

WEKO 40713

Oguma, Naomi

Search repository
Hirata, Naoki

× Hirata, Naoki

WEKO 40714

Hirata, Naoki

Search repository
Ichikawa, Musubu

× Ichikawa, Musubu

WEKO 40715

Ichikawa, Musubu

Search repository
信州大学研究者総覧へのリンク
氏名 Ichikawa, Musubu
URL http://soar-rd.shinshu-u.ac.jp/profile/ja.WenUjFkV.html
出版者
出版者 ELSEVIER SCIENCE BV
引用
内容記述タイプ Other
内容記述 ORGANIC ELECTRONICS. 14(1):19-25 (2013)
書誌情報 ORGANIC ELECTRONICS

巻 14, 号 1, p. 19-25, 発行日 2013-01
抄録
内容記述タイプ Abstract
内容記述 Here we propose and demonstrate a new approach to wet-processed organic thin-film transistors utilizing highly-stable colloids of small molecular organic semiconductors prepared by laser ablation technique. Highly stable N,N′-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) colloids of 0.1 wt% concentration were prepared successfully by laser ablation technique in acetonitrile. Mean particle size of the prepared PTCDI-C13 colloid measured by dynamic light scattering method was smaller than 50 nm which is also confirmed by a transmission electron microscope observation. By simple drop-casting of prepared PTCDI-C13 colloids, typical n-type OTFTs with good saturation properties were fabricated successfully. The highest electron mobility was 1.1 × 10−3 cm2/Vs and increased up to 0.027 cm2/Vs by post-annealing treatment.
資源タイプ(コンテンツの種類)
内容記述タイプ Other
内容記述 Article
ISSN
収録物識別子タイプ ISSN
収録物識別子 1566-1199
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA11621763
DOI
識別子タイプ DOI
関連識別子 https://doi.org/10.1016/j.orgel.2012.10.024
関連名称 10.1016/j.orgel.2012.10.024
権利
権利情報 Copyright© 2013 Elsevier B.V.
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
WoS
表示名 Web of Science
URL http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000313686200003
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