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  1. 080 繊維学部
  2. 0801 学術論文

Fused thiophene-split oligothiophenes with high ionization potentials for OTFTs

http://hdl.handle.net/10091/10719
http://hdl.handle.net/10091/10719
8f8f073a-895f-480f-84b2-a30e91892e95
名前 / ファイル ライセンス アクション
Fused_thiophene-split_oligothiophenes.pdf Fused_thiophene-split_oligothiophenes.pdf (511.3 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2010-10-19
タイトル
タイトル Fused thiophene-split oligothiophenes with high ionization potentials for OTFTs
言語
言語 eng
DOI
関連識別子 https://doi.org/10.1016/j.synthmet.2009.06.016
関連名称 10.1016/j.synthmet.2009.06.016
キーワード
主題 OTFT, Fused thiophene, Oligothiophene, Ionization potential, Air stability
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
著者 Zhang, Yanying

× Zhang, Yanying

Zhang, Yanying

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Ichikawa, Musubu

× Ichikawa, Musubu

Ichikawa, Musubu

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Hattori, Jinya

× Hattori, Jinya

Hattori, Jinya

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Kato, Tatsuya

× Kato, Tatsuya

Kato, Tatsuya

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Sazaki, Ayumi

× Sazaki, Ayumi

Sazaki, Ayumi

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Kanazawa, Shusuke

× Kanazawa, Shusuke

Kanazawa, Shusuke

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Kato, Shimpei

× Kato, Shimpei

Kato, Shimpei

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Zhang, ChunHan

× Zhang, ChunHan

Zhang, ChunHan

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Taniguchi, Yoshio

× Taniguchi, Yoshio

Taniguchi, Yoshio

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信州大学研究者総覧へのリンク
氏名 Ichikawa, Musubu
URL http://soar-rd.shinshu-u.ac.jp/profile/ja.WenUjFkV.html
信州大学研究者総覧へのリンク
氏名 Taniguchi, Yoshio
URL http://soar-rd.shinshu-u.ac.jp/profile/ja.HCfpjekV.html
出版者
出版者 ELSEVIER SCIENCE SA
引用
内容記述 Synthetic Metals. 159(17-18):1890-1895 (2009)
書誌情報 Synthetic Metals

巻 159, 号 17-18, p. 1890-1895, 発行日 2009-09
抄録
内容記述 Fused thiophene-split oligothiophenes were synthesized by Suzuki coupling. The relationship between the structure of these fused thiophene-split oligothiophenes and DH-6T (α,ω-dihexylsexithiophene) and their performance in OTFTs was discussed. The realignment of HTTfTTTH (2,5-bis-(5′-hexyl-[2,2′]bithiophenyl-5-yl)-thieno[3,2-b] thiophene) molecule on the substrate after annealing was revealed by X-ray diffraction and atomic force microscopy. A similar but novel compound, TTfTTT (2,5-bis-[2,2′]bithiophenyl-5-yl-thieno[3,2-b]thiophene), was also prepared and evaluated as an organic transistor material. Air stabilities of these three compounds in OTFT devices were affected mainly by chemical properties, but also by the ionization potentials (Ip) of these materials. Among the three compounds, HTTfTTTH had a higher Ip because the thiophene sequence was split by fused thiophene and the best air stability, due to the end-capping of its active α-positions by hexyl substitution.
資源タイプ(コンテンツの種類)
ISSN
収録物識別子タイプ ISSN
収録物識別子 0379-6779
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA00446016
権利
権利情報 Copyright (c) 2009 Elsevier B.V.
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
WoS
URL http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000270641600036
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