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Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3
http://hdl.handle.net/10091/00018854
http://hdl.handle.net/10091/000188542761ce69-8e36-437d-b491-b287fac945bf
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
Czochralski_growth_techniques_of_germanium_crystals_grown (512.2 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2016-05-23 | |||||
| タイトル | ||||||
| タイトル | Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3 | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1016/j.jcrysgro.2011.11.051 | |||||
| 関連名称 | 10.1016/j.jcrysgro.2011.11.051 | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Doping | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Impurities | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Czochralski method | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Semiconducting germanium | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Taishi, Toshinori
× Taishi, Toshinori× Hashimoto, Yoshio× Ise, Hideaki× Murao, Yu× Ohsawa, Takayuki× Yonenaga, Ichiro |
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| 信州大学研究者総覧へのリンク | ||||||
| 表示名 | Taishi, Toshinori | |||||
| URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html | |||||
| 信州大学研究者総覧へのリンク | ||||||
| 表示名 | Hashimoto, Yoshio | |||||
| URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.gUTUZVkh.html | |||||
| 出版者 | ||||||
| 出版者 | ELSEVIER SCIENCE BV | |||||
| 引用 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | JOURNAL OF CRYSTAL GROWTH. 360:47-51 (2012) | |||||
| 書誌情報 |
Journal of Crystal Growth 巻 360, p. 47-51, 発行日 2012-12-01 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We propose two unique Czochralski (CZ) techniques for growing germanium (Ge) crystals with an extremely low dislocation density and high interstitial oxygen concentration ([Oi]) using boron oxide (B2O3) and a silica crucible. When a Ge melt is partially covered with liquid B2O3, but only on the outer region of the melt surface, germanium-oxide (GeO2)-related particles forming naturally in the melt are effectively dissolved by the liquid B2O3. The clean central portion of the melt produces dislocation-free undoped or Ga-doped Ge crystals. In addition, Ge crystals with [Oi] up to 6 x 10(17) cm(-3) can be grown from a melt fully covered by liquid B2O3 with added GeO2 powder. The reaction and transportation of oxygen atoms during the growth process using B2O3 was investigated, revealing that liquid B2O3 acts like a catalyst without heavy contamination of the growing Ge crystal by B and Si atoms. (C) 2011 Elsevier B.V. All rights reserved. | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0022-0248 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00696341 | |||||
| 権利 | ||||||
| 権利情報 | © 2012. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| WoS | ||||||
| 表示名 | Web of Science | |||||
| URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000310942500010 | |||||
