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{"_buckets": {"deposit": "f7fd6409-3f88-4d89-9eaf-1ed694fb6928"}, "_deposit": {"id": "18088", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "18088"}, "status": "published"}, "_oai": {"id": "oai:soar-ir.repo.nii.ac.jp:00018088", "sets": ["1222"]}, "author_link": ["50543", "50544", "50545", "50546", "50547", "50548"], "item_1628147817048": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_6_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2012-12-01", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "51", "bibliographicPageStart": "47", "bibliographicVolumeNumber": "360", "bibliographic_titles": [{"bibliographic_title": "Journal of Crystal Growth"}]}]}, "item_6_description_20": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We propose two unique Czochralski (CZ) techniques for growing germanium (Ge) crystals with an extremely low dislocation density and high interstitial oxygen concentration ([Oi]) using boron oxide (B2O3) and a silica crucible. When a Ge melt is partially covered with liquid B2O3, but only on the outer region of the melt surface, germanium-oxide (GeO2)-related particles forming naturally in the melt are effectively dissolved by the liquid B2O3. The clean central portion of the melt produces dislocation-free undoped or Ga-doped Ge crystals. In addition, Ge crystals with [Oi] up to 6 x 10(17) cm(-3) can be grown from a melt fully covered by liquid B2O3 with added GeO2 powder. The reaction and transportation of oxygen atoms during the growth process using B2O3 was investigated, revealing that liquid B2O3 acts like a catalyst without heavy contamination of the growing Ge crystal by B and Si atoms. (C) 2011 Elsevier B.V. All rights reserved.", "subitem_description_type": "Abstract"}]}, "item_6_description_5": {"attribute_name": "引用", "attribute_value_mlt": [{"subitem_description": "JOURNAL OF CRYSTAL GROWTH. 360:47-51 (2012)", "subitem_description_type": "Other"}]}, "item_6_link_3": {"attribute_name": "信州大学研究者総覧へのリンク", "attribute_value_mlt": [{"subitem_link_text": "Taishi, Toshinori", "subitem_link_url": "http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html"}, {"subitem_link_text": "Hashimoto, Yoshio", "subitem_link_url": "http://soar-rd.shinshu-u.ac.jp/profile/ja.gUTUZVkh.html"}]}, "item_6_link_67": {"attribute_name": "WoS", "attribute_value_mlt": [{"subitem_link_text": "Web of Science", "subitem_link_url": "http://gateway.isiknowledge.com/gateway/Gateway.cgi?\u0026GWVersion=2\u0026SrcAuth=ShinshuUniv\u0026SrcApp=ShinshuUniv\u0026DestLinkType=FullRecord\u0026DestApp=WOS\u0026KeyUT=000310942500010"}]}, "item_6_publisher_4": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "ELSEVIER SCIENCE BV"}]}, "item_6_relation_48": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "10.1016/j.jcrysgro.2011.11.051"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1016/j.jcrysgro.2011.11.051", "subitem_relation_type_select": "DOI"}}]}, "item_6_rights_62": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 2012. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/"}]}, "item_6_select_64": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_6_source_id_35": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0022-0248", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_39": {"attribute_name": "NII ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0022-0248", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_40": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00696341", "subitem_source_identifier_type": "NCID"}]}, "item_6_text_69": {"attribute_name": "wosonly authkey", "attribute_value_mlt": [{"subitem_text_value": "Doping; Impurities; Czochralski method; Semiconducting germanium"}]}, "item_6_text_70": {"attribute_name": "wosonly keywords", "attribute_value_mlt": [{"subitem_text_value": "NFRARED-ABSORPTION; SILICON-CRYSTALS; DOPED SILICON; OXYGEN; GAAS; SPECTROSCOPY; DISLOCATIONS; DEFECTS"}]}, "item_6_textarea_68": {"attribute_name": "wosonly abstract", "attribute_value_mlt": [{"subitem_textarea_value": "We propose two unique Czochralski (CZ) techniques for growing germanium (Ge) crystals with an extremely low dislocation density and high interstitial oxygen concentration ([Oi]) using boron oxide (B2O3) and a silica crucible. When a Ge melt is partially covered with liquid B2O3, but only on the outer region of the melt surface, germanium-oxide (GeO2)-related particles forming naturally in the melt are effectively dissolved by the liquid B2O3. The clean central portion of the melt produces dislocation-free undoped or Ga-doped Ge crystals. In addition, Ge crystals with [Oi] up to 6 x 10(17) cm(-3) can be grown from a melt fully covered by liquid B2O3 with added GeO2 powder. The reaction and transportation of oxygen atoms during the growth process using B2O3 was investigated, revealing that liquid B2O3 acts like a catalyst without heavy contamination of the growing Ge crystal by B and Si atoms. (C) 2011 Elsevier B.V. All rights reserved."}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Taishi, Toshinori"}], "nameIdentifiers": [{"nameIdentifier": "50543", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hashimoto, Yoshio"}], "nameIdentifiers": [{"nameIdentifier": "50544", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ise, Hideaki"}], "nameIdentifiers": [{"nameIdentifier": "50545", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Murao, Yu"}], "nameIdentifiers": [{"nameIdentifier": "50546", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohsawa, Takayuki"}], "nameIdentifiers": [{"nameIdentifier": "50547", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yonenaga, Ichiro"}], "nameIdentifiers": [{"nameIdentifier": "50548", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2016-05-23"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "Czochralski_growth_techniques_of_germanium_crystals_grown.pdf", "filesize": [{"value": "512.2 kB"}], "format": "binary/octet-stream", "future_date_message": "", "is_thumbnail": false, "licensefree": "© 2012. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ \u003cbr/\u003e", "licensetype": "license_note", "mimetype": "binary/octet-stream", "size": 512200.00000000006, "url": {"label": "Czochralski_growth_techniques_of_germanium_crystals_grown", "url": "https://soar-ir.repo.nii.ac.jp/record/18088/files/Czochralski_growth_techniques_of_germanium_crystals_grown.pdf"}, "version_id": "d6db9af5-8a93-416a-a32b-fd440e9272c0"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Doping", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Impurities", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Czochralski method", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Semiconducting germanium", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3", "subitem_title_language": "en"}]}, "item_type_id": "6", "owner": "1", "path": ["1222"], "permalink_uri": "http://hdl.handle.net/10091/00018854", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-05-23"}, "publish_date": "2016-05-23", "publish_status": "0", "recid": "18088", "relation": {}, "relation_version_is_last": true, "title": ["Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3"], "weko_shared_id": -1}
  1. 060 工学部
  2. 0601 学術論文

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3

http://hdl.handle.net/10091/00018854
http://hdl.handle.net/10091/00018854
2761ce69-8e36-437d-b491-b287fac945bf
名前 / ファイル ライセンス アクション
Czochralski_growth_techniques_of_germanium_crystals_grown.pdf Czochralski_growth_techniques_of_germanium_crystals_grown (512.2 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-05-23
タイトル
言語 en
タイトル Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3
言語
言語 eng
キーワード
主題Scheme Other
主題 Doping
キーワード
主題Scheme Other
主題 Impurities
キーワード
主題Scheme Other
主題 Czochralski method
キーワード
主題Scheme Other
主題 Semiconducting germanium
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
著者 Taishi, Toshinori

× Taishi, Toshinori

WEKO 50543

Taishi, Toshinori

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Hashimoto, Yoshio

× Hashimoto, Yoshio

WEKO 50544

Hashimoto, Yoshio

Search repository
Ise, Hideaki

× Ise, Hideaki

WEKO 50545

Ise, Hideaki

Search repository
Murao, Yu

× Murao, Yu

WEKO 50546

Murao, Yu

Search repository
Ohsawa, Takayuki

× Ohsawa, Takayuki

WEKO 50547

Ohsawa, Takayuki

Search repository
Yonenaga, Ichiro

× Yonenaga, Ichiro

WEKO 50548

Yonenaga, Ichiro

Search repository
信州大学研究者総覧へのリンク
氏名 Taishi, Toshinori
URL http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html
信州大学研究者総覧へのリンク
氏名 Hashimoto, Yoshio
URL http://soar-rd.shinshu-u.ac.jp/profile/ja.gUTUZVkh.html
出版者
出版者 ELSEVIER SCIENCE BV
引用
内容記述タイプ Other
内容記述 JOURNAL OF CRYSTAL GROWTH. 360:47-51 (2012)
書誌情報 Journal of Crystal Growth

巻 360, p. 47-51, 発行日 2012-12-01
抄録
内容記述タイプ Abstract
内容記述 We propose two unique Czochralski (CZ) techniques for growing germanium (Ge) crystals with an extremely low dislocation density and high interstitial oxygen concentration ([Oi]) using boron oxide (B2O3) and a silica crucible. When a Ge melt is partially covered with liquid B2O3, but only on the outer region of the melt surface, germanium-oxide (GeO2)-related particles forming naturally in the melt are effectively dissolved by the liquid B2O3. The clean central portion of the melt produces dislocation-free undoped or Ga-doped Ge crystals. In addition, Ge crystals with [Oi] up to 6 x 10(17) cm(-3) can be grown from a melt fully covered by liquid B2O3 with added GeO2 powder. The reaction and transportation of oxygen atoms during the growth process using B2O3 was investigated, revealing that liquid B2O3 acts like a catalyst without heavy contamination of the growing Ge crystal by B and Si atoms. (C) 2011 Elsevier B.V. All rights reserved.
ISSN
収録物識別子タイプ ISSN
収録物識別子 0022-0248
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA00696341
DOI
識別子タイプ DOI
関連識別子 https://doi.org/10.1016/j.jcrysgro.2011.11.051
関連名称 10.1016/j.jcrysgro.2011.11.051
権利
権利情報 © 2012. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
WoS
表示名 Web of Science
URL http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000310942500010
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