{"_buckets": {"deposit": "f7fd6409-3f88-4d89-9eaf-1ed694fb6928"}, "_deposit": {"id": "18088", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "18088"}, "status": "published"}, "_oai": {"id": "oai:soar-ir.repo.nii.ac.jp:00018088", "sets": ["1222"]}, "author_link": ["50543", "50544", "50545", "50546", "50547", "50548"], "item_1628147817048": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_6_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2012-12-01", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "51", "bibliographicPageStart": "47", "bibliographicVolumeNumber": "360", "bibliographic_titles": [{"bibliographic_title": "Journal of Crystal Growth"}]}]}, "item_6_description_20": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We propose two unique Czochralski (CZ) techniques for growing germanium (Ge) crystals with an extremely low dislocation density and high interstitial oxygen concentration ([Oi]) using boron oxide (B2O3) and a silica crucible. When a Ge melt is partially covered with liquid B2O3, but only on the outer region of the melt surface, germanium-oxide (GeO2)-related particles forming naturally in the melt are effectively dissolved by the liquid B2O3. The clean central portion of the melt produces dislocation-free undoped or Ga-doped Ge crystals. In addition, Ge crystals with [Oi] up to 6 x 10(17) cm(-3) can be grown from a melt fully covered by liquid B2O3 with added GeO2 powder. The reaction and transportation of oxygen atoms during the growth process using B2O3 was investigated, revealing that liquid B2O3 acts like a catalyst without heavy contamination of the growing Ge crystal by B and Si atoms. (C) 2011 Elsevier B.V. All rights reserved.", "subitem_description_type": "Abstract"}]}, "item_6_description_5": {"attribute_name": "引用", "attribute_value_mlt": [{"subitem_description": "JOURNAL OF CRYSTAL GROWTH. 360:47-51 (2012)", "subitem_description_type": "Other"}]}, "item_6_link_3": {"attribute_name": "信州大学研究者総覧へのリンク", "attribute_value_mlt": [{"subitem_link_text": "Taishi, Toshinori", "subitem_link_url": "http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html"}, {"subitem_link_text": "Hashimoto, Yoshio", "subitem_link_url": "http://soar-rd.shinshu-u.ac.jp/profile/ja.gUTUZVkh.html"}]}, "item_6_link_67": {"attribute_name": "WoS", "attribute_value_mlt": [{"subitem_link_text": "Web of Science", "subitem_link_url": "http://gateway.isiknowledge.com/gateway/Gateway.cgi?\u0026GWVersion=2\u0026SrcAuth=ShinshuUniv\u0026SrcApp=ShinshuUniv\u0026DestLinkType=FullRecord\u0026DestApp=WOS\u0026KeyUT=000310942500010"}]}, "item_6_publisher_4": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "ELSEVIER SCIENCE BV"}]}, "item_6_relation_48": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "10.1016/j.jcrysgro.2011.11.051"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1016/j.jcrysgro.2011.11.051", "subitem_relation_type_select": "DOI"}}]}, "item_6_rights_62": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 2012. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/"}]}, "item_6_select_64": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_6_source_id_35": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0022-0248", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_39": {"attribute_name": "NII ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0022-0248", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_40": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00696341", "subitem_source_identifier_type": "NCID"}]}, "item_6_text_69": {"attribute_name": "wosonly authkey", "attribute_value_mlt": [{"subitem_text_value": "Doping; Impurities; Czochralski method; Semiconducting germanium"}]}, "item_6_text_70": {"attribute_name": "wosonly keywords", "attribute_value_mlt": [{"subitem_text_value": "NFRARED-ABSORPTION; SILICON-CRYSTALS; DOPED SILICON; OXYGEN; GAAS; SPECTROSCOPY; DISLOCATIONS; DEFECTS"}]}, "item_6_textarea_68": {"attribute_name": "wosonly abstract", "attribute_value_mlt": [{"subitem_textarea_value": "We propose two unique Czochralski (CZ) techniques for growing germanium (Ge) crystals with an extremely low dislocation density and high interstitial oxygen concentration ([Oi]) using boron oxide (B2O3) and a silica crucible. When a Ge melt is partially covered with liquid B2O3, but only on the outer region of the melt surface, germanium-oxide (GeO2)-related particles forming naturally in the melt are effectively dissolved by the liquid B2O3. The clean central portion of the melt produces dislocation-free undoped or Ga-doped Ge crystals. In addition, Ge crystals with [Oi] up to 6 x 10(17) cm(-3) can be grown from a melt fully covered by liquid B2O3 with added GeO2 powder. The reaction and transportation of oxygen atoms during the growth process using B2O3 was investigated, revealing that liquid B2O3 acts like a catalyst without heavy contamination of the growing Ge crystal by B and Si atoms. (C) 2011 Elsevier B.V. All rights reserved."}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Taishi, Toshinori"}], "nameIdentifiers": [{"nameIdentifier": "50543", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hashimoto, Yoshio"}], "nameIdentifiers": [{"nameIdentifier": "50544", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ise, Hideaki"}], "nameIdentifiers": [{"nameIdentifier": "50545", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Murao, Yu"}], "nameIdentifiers": [{"nameIdentifier": "50546", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohsawa, Takayuki"}], "nameIdentifiers": [{"nameIdentifier": "50547", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yonenaga, Ichiro"}], "nameIdentifiers": [{"nameIdentifier": "50548", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2016-05-23"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "Czochralski_growth_techniques_of_germanium_crystals_grown.pdf", "filesize": [{"value": "512.2 kB"}], "format": "binary/octet-stream", "future_date_message": "", "is_thumbnail": false, "licensefree": "© 2012. 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