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  1. 060 工学部
  2. 0601 学術論文

Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals

http://hdl.handle.net/10091/00018857
420305b2-3f50-499e-998e-600530dc0d0e
名前 / ファイル ライセンス アクション
Morphology_and Morphology_and formation mechanism of metallic inclusions (517.1 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-05-24
タイトル
言語 en
タイトル Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals
言語
言語 eng
キーワード
主題Scheme Other
主題 Defect
キーワード
主題Scheme Other
主題 Inclusion
キーワード
主題Scheme Other
主題 Bridgman technique
キーワード
主題Scheme Other
主題 Growth from melt
キーワード
主題Scheme Other
主題 Sapphire
キーワード
主題Scheme Other
主題 Light emitting diodes
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
著者 Taishi, T

× Taishi, T

WEKO 50557

Taishi, T

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Kobayashi, T

× Kobayashi, T

WEKO 50558

Kobayashi, T

Search repository
Shinozuka, M

× Shinozuka, M

WEKO 50559

Shinozuka, M

Search repository
Ohba, E

× Ohba, E

WEKO 50560

Ohba, E

Search repository
Miyagawa, C

× Miyagawa, C

WEKO 50561

Miyagawa, C

Search repository
Hoshikawa, K

× Hoshikawa, K

WEKO 50562

Hoshikawa, K

Search repository
信州大学研究者総覧へのリンク
氏名 Taishi, Toshinori
URL http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html
信州大学研究者総覧へのリンク
氏名 Hoshikawa, Keigo
URL http://soar-rd.shinshu-u.ac.jp/profile/ja.jakhPpym.html
出版者
出版者 ELSEVIER SCIENCE BV
引用
内容記述タイプ Other
内容記述 JOURNAL OF CRYSTAL GROWTH. 401:388-391 (2014)
書誌情報 JOURNAL OF CRYSTAL GROWTH

巻 401, p. 388-391, 発行日 2014-09-01
抄録
内容記述タイプ Abstract
内容記述 Morphologies of metallic inclusions observed in sapphire crystals grown by the vertical Bridgman (VB) technique using a tungsten (W) crucible were investigated. Square- or hexagonal-shaped inclusions 2-5 mu m in size were observed in sapphire crystals around the interface between the seed and the grown crystal. It was found that such inclusions consisted of W metal used for the crucible. The morphology of some of the inclusions reflects a rhombic dodecahedron which is based on the cubic structure of W and is surrounded by {110} faces. It is probable that inclusions form in the sapphire melt during the crystal growth process, and then sink in the melt to the growth interface due to the high density of W. (C) 2013 Elsevier B.V. All rights reserved.
ISSN
収録物識別子タイプ ISSN
収録物識別子 0022-0248
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA00696341
DOI
関連識別子
識別子タイプ DOI
関連識別子 https://doi.org/10.1016/j.jcrysgro.2013.11.063
関連名称
関連名称 10.1016/j.jcrysgro.2013.11.063
権利
権利情報 © 2014. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
WoS
表示名 Web of Science
URL http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000340001800081
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