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Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals
http://hdl.handle.net/10091/00018857
420305b2-3f50-499e-998e-600530dc0d0e
名前 / ファイル | ライセンス | アクション | |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2016-05-24 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Defect | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Inclusion | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Bridgman technique | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Growth from melt | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Sapphire | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Light emitting diodes | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Taishi, T
× Taishi, T× Kobayashi, T× Shinozuka, M× Ohba, E× Miyagawa, C× Hoshikawa, K |
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信州大学研究者総覧へのリンク | ||||||
氏名 | Taishi, Toshinori | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html | |||||
信州大学研究者総覧へのリンク | ||||||
氏名 | Hoshikawa, Keigo | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.jakhPpym.html | |||||
出版者 | ||||||
出版者 | ELSEVIER SCIENCE BV | |||||
引用 | ||||||
内容記述タイプ | Other | |||||
内容記述 | JOURNAL OF CRYSTAL GROWTH. 401:388-391 (2014) | |||||
書誌情報 |
JOURNAL OF CRYSTAL GROWTH 巻 401, p. 388-391, 発行日 2014-09-01 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Morphologies of metallic inclusions observed in sapphire crystals grown by the vertical Bridgman (VB) technique using a tungsten (W) crucible were investigated. Square- or hexagonal-shaped inclusions 2-5 mu m in size were observed in sapphire crystals around the interface between the seed and the grown crystal. It was found that such inclusions consisted of W metal used for the crucible. The morphology of some of the inclusions reflects a rhombic dodecahedron which is based on the cubic structure of W and is surrounded by {110} faces. It is probable that inclusions form in the sapphire melt during the crystal growth process, and then sink in the melt to the growth interface due to the high density of W. (C) 2013 Elsevier B.V. All rights reserved. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0022-0248 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00696341 | |||||
DOI | ||||||
関連識別子 | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.jcrysgro.2013.11.063 | |||||
関連名称 | ||||||
関連名称 | 10.1016/j.jcrysgro.2013.11.063 | |||||
権利 | ||||||
権利情報 | © 2014. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
WoS | ||||||
表示名 | Web of Science | |||||
URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000340001800081 |