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Co-Ferrite Thin Films With Perpendicular Magnetic Anisotropy
http://hdl.handle.net/10091/00020324
http://hdl.handle.net/10091/000203248b3bbc1a-7ab3-4367-aad4-dfd34e0ab79d
| 名前 / ファイル | ライセンス | アクション |
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Co-Ferrite_Thin_Films_With_Perpendicular_Magnetic_Anisotropy.pdf (734.4 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
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| 公開日 | 2018-03-09 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Co-Ferrite Thin Films With Perpendicular Magnetic Anisotropy | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| DOI | ||||||||||||
| 関連識別子 | https://doi.org/10.1109/TMAG.2015.2436394 | |||||||||||
| 関連名称 | 10.1109/TMAG.2015.2436394 | |||||||||||
| キーワード | ||||||||||||
| 主題 | Co-ferrite, magnetoelastic effect, perpendicular magnetic anisotropy, silicon-compatible fabrication | |||||||||||
| 資源タイプ | ||||||||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| タイプ | journal article | |||||||||||
| 著者 |
Liu, Xiaoxi
× Liu, Xiaoxi
× Shirasath, Sagar
× Shindoh, Kensuke
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| 信州大学研究者総覧へのリンク | ||||||||||||
| 氏名 | Liu, Xiaoxi | |||||||||||
| URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.HpAFbpkh.html | |||||||||||
| 出版者 | ||||||||||||
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |||||||||||
| 引用 | ||||||||||||
| 内容記述 | IEEE TRANSACTIONS ON MAGNETICS. 51(11): 2200304 (2015) | |||||||||||
| 書誌情報 |
IEEE TRANSACTIONS ON MAGNETICS 巻 51, 号 11, p. 2200304, 発行日 2015 |
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| 抄録 | ||||||||||||
| 内容記述 | Co-ferrite thin film with spinel structure is attractive for spintronics and multifunctional devices. So far, single-crystal substrates are necessary to introduce perpendicular magnetic anisotropy in co-ferrite films. In this paper, a unique process has been developed to deposit co-ferrite thin films onto thermally oxidized silicon wafer with perpendicular magnetic anisotropy. We have successfully prepared co-ferrite films with (00l) orientation. Those films show perpendicular coercivities as large as 12.8 kOe. X-ray diffractometry results revealed that compressive strain, which is introduced by the postannealing process rather than deposition process, is as large as 1.3% in films with (00l) orientation. The large coercivity and perpendicular magnetic anisotropy can be quantitatively explained by the magnetoelastic effect. This silicon-compatible fabrication process is useful to further extending the applications of co-ferrite films. | |||||||||||
| 資源タイプ（コンテンツの種類） | ||||||||||||
| ISSN | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 0018-9464 | |||||||||||
| 権利 | ||||||||||||
| 権利情報 | © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.\n | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | AM | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
| WoS | ||||||||||||
| URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000364770500136 | |||||||||||
