Item type |
学術雑誌論文 / Journal Article(1) |
公開日 |
2020-10-14 |
タイトル |
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タイトル |
Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air |
言語 |
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言語 |
eng |
DOI |
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関連識別子 |
https://doi.org/10.1016/j.jcrysgro.2016.04.022 |
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関連名称 |
10.1016/j.jcrysgro.2016.04.022 |
キーワード |
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主題 |
Bridgman technique, Growth from melt, Single crystal growth, Oxides, Semiconducting gallium compounds |
資源タイプ |
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資源 |
http://purl.org/coar/resource_type/c_6501 |
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タイプ |
journal article |
著者 |
Hoshikawa, K
Ohba, E
Kobayashi, T
Yanagisawa, J
Miyagawa, C
Nakamura, Y
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出版者 |
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出版者 |
ELSEVIER SCIENCE BV |
引用 |
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内容記述 |
JOURNAL OF CRYSTAL GROWTH.447:36-41(2016) |
書誌情報 |
JOURNAL OF CRYSTAL GROWTH
巻 447,
p. 36-41,
発行日 2016-08-01
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抄録 |
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内容記述 |
A new approach to beta-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the beta-Ga2O3 melting temperature and investigating the effects of crucible composition and shape. beta-Ga2O3 single crystals 25 mm in diameter were grown in platinum rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall. Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane. (C) 2016 Elsevier B.V. All rights reserved. |
資源タイプ(コンテンツの種類) |
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内容記述 |
Article |
ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
0022-0248 |
書誌レコードID |
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収録物識別子タイプ |
NCID |
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収録物識別子 |
AA00696341 |
権利 |
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権利情報 |
© 2016. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ |
出版タイプ |
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出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
WoS |
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URL |
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000376890300007 |