{"_buckets": {"deposit": "2c256d10-6b81-48df-be74-9747d6de6fc0"}, "_deposit": {"id": "21524", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21524"}, "status": "published"}, "_oai": {"id": "oai:soar-ir.repo.nii.ac.jp:00021524"}, "item_6_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2016-08-01", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "41", "bibliographicPageStart": "36", "bibliographicVolumeNumber": "447", "bibliographic_titles": [{"bibliographic_title": "JOURNAL OF CRYSTAL GROWTH"}]}]}, "item_6_description_20": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "A new approach to beta-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the beta-Ga2O3 melting temperature and investigating the effects of crucible composition and shape. beta-Ga2O3 single crystals 25 mm in diameter were grown in platinum rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall. Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane. (C) 2016 Elsevier B.V. All rights reserved.", "subitem_description_type": "Abstract"}]}, "item_6_description_30": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7\uff08\u30b3\u30f3\u30c6\u30f3\u30c4\u306e\u7a2e\u985e\uff09", "attribute_value_mlt": [{"subitem_description": "Article", "subitem_description_type": "Other"}]}, "item_6_description_5": {"attribute_name": "\u5f15\u7528", "attribute_value_mlt": [{"subitem_description": "JOURNAL OF CRYSTAL GROWTH.447:36-41(2016)", "subitem_description_type": "Other"}]}, "item_6_link_67": {"attribute_name": "WoS", "attribute_value_mlt": [{"subitem_link_text": "Web of Science", "subitem_link_url": "http://gateway.isiknowledge.com/gateway/Gateway.cgi?\u0026GWVersion=2\u0026SrcAuth=ShinshuUniv\u0026SrcApp=ShinshuUniv\u0026DestLinkType=FullRecord\u0026DestApp=WOS\u0026KeyUT=000376890300007"}]}, "item_6_publisher_4": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "ELSEVIER SCIENCE BV"}]}, "item_6_relation_48": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "10.1016/j.jcrysgro.2016.04.022"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1016/j.jcrysgro.2016.04.022", "subitem_relation_type_select": "DOI"}}]}, "item_6_rights_62": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a9 2016. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/"}]}, "item_6_select_64": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_6_source_id_35": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0022-0248", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_39": {"attribute_name": "NII ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0022-0248", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_40": {"attribute_name": "\u66f8\u8a8c\u30ec\u30b3\u30fc\u30c9ID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00696341", "subitem_source_identifier_type": "NCID"}]}, "item_6_text_69": {"attribute_name": "wosonly authkey", "attribute_value_mlt": [{"subitem_text_value": "CONDUCTIVITY; EDGE"}]}, "item_6_text_70": {"attribute_name": "wosonly keywords", "attribute_value_mlt": [{"subitem_text_value": "A new approach to beta-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the beta-Ga2O3 melting temperature and investigating the effects of crucible composition and shape. beta-Ga2O3 single crystals 25 mm in diameter were grown in platinum rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall. Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane. (C) 2016 Elsevier B.V. All rights reserved."}]}, "item_6_textarea_68": {"attribute_name": "wosonly abstract", "attribute_value_mlt": [{"subitem_textarea_value": "Bridgman technique; Growth from melt; Single crystal growth; Oxides; Semiconducting gallium compounds"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Hoshikawa, K"}], "nameIdentifiers": [{"nameIdentifier": "109812", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohba, E"}], "nameIdentifiers": [{"nameIdentifier": "109813", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kobayashi, T"}], "nameIdentifiers": [{"nameIdentifier": "109814", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yanagisawa, J"}], "nameIdentifiers": [{"nameIdentifier": "109815", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Miyagawa, C"}], "nameIdentifiers": [{"nameIdentifier": "109816", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nakamura, Y"}], "nameIdentifiers": [{"nameIdentifier": "109817", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2020-10-14"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "J_CrystGrowth447-36.pdf", "filesize": [{"value": "769.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensefree": "\u00a9 2016. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/", "licensetype": "license_free", "mimetype": "application/pdf", "size": 769800.0, "url": {"label": "J_CrystGrowth447-36.pdf", "url": "https://soar-ir.repo.nii.ac.jp/record/21524/files/J_CrystGrowth447-36.pdf"}, "version_id": "377b4f97-c82b-4a07-b306-f6fab25c21fe"}]}, "item_keyword": {"attribute_name": "\u30ad\u30fc\u30ef\u30fc\u30c9", "attribute_value_mlt": [{"subitem_subject": "Bridgman technique", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Growth from melt", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Single crystal growth", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Oxides", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Semiconducting gallium compounds", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Growth of \u03b2-Ga2O3 single crystals using vertical Bridgman method in ambient air", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Growth of \u03b2-Ga2O3 single crystals using vertical Bridgman method in ambient air"}]}, "item_type_id": "6", "owner": "1", "path": ["1221/1222"], "permalink_uri": "http://hdl.handle.net/10091/00022281", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2020-10-14"}, "publish_date": "2020-10-14", "publish_status": "0", "recid": "21524", "relation": {}, "relation_version_is_last": true, "title": ["Growth of \u03b2-Ga2O3 single crystals using vertical Bridgman method in ambient air"], "weko_shared_id": null}