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Morphological Control of Periodic GaAs Hole Arrays by Simple Au-Mediated Wet Etching
http://hdl.handle.net/10091/15966
http://hdl.handle.net/10091/15966e3ce41ae-ad67-4fba-bb90-2e41de16fc60
| 名前 / ファイル | ライセンス | アクション |
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Morphological_Control_Periodic_GaAs_Hole_Arrays.pdf (709.8 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
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| 公開日 | 2012-09-11 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Morphological Control of Periodic GaAs Hole Arrays by Simple Au-Mediated Wet Etching | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| DOI | ||||||||||||
| 関連識別子 | https://doi.org/10.1149/2.021206jes | |||||||||||
| 関連名称 | 10.1149/2.021206jes | |||||||||||
| キーワード | ||||||||||||
| 主題 | POROUS SILICON, NANOWIRE ARRAYS, CARBON NANOTUBES, SOLAR-CELLS, GAN, FABRICATION, CATALYST, SURFACE, METALS | |||||||||||
| 資源タイプ | ||||||||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| タイプ | journal article | |||||||||||
| 著者 |
Yasukawa, Yukiko
× Yasukawa, Yukiko
× Asoh, Hidetaka
× Ono, Sachiko
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| 出版者 | ||||||||||||
| 出版者 | ELECTROCHEMICAL SOC INC | |||||||||||
| 引用 | ||||||||||||
| 内容記述 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 159(5):D328-D332 (2012) | |||||||||||
| 書誌情報 |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 巻 159, 号 5, p. D328-D332, 発行日 2012 |
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| 抄録 | ||||||||||||
| 内容記述 | In this study we report etched-GaAs morphologies with noble-metal layers embedded in the etching structures that are prepared by a simple wet process. Well-controlled n-GaAs (100) hole arrays are formed through metal-assisted chemical etching using a sputtered Au layer as an etching catalyst. GaAs exhibits anisotropic etching behavior, which originates from the substrate crystallography. The configuration of hole arrays is determined by the concentration of hydrofluoric acid included in the etching solution, the arrangement of Au catalysis layers relative to the preferential etching direction of the GaAs (100) substrate, and the etching time. The relationship between the etching process and the resultant hole structure is also discussed. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.021206jes] All rights reserved. | |||||||||||
| 資源タイプ（コンテンツの種類） | ||||||||||||
| ISSN | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 0013-4651 | |||||||||||
| 書誌レコードID | ||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA00697016 | |||||||||||
| 権利 | ||||||||||||
| 権利情報 | Copyright © The Electrochemical Society, Inc. 2012. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in J. Electrochem. Soc. 2012 volume 159, issue 5, D328-D332 (2012). | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| WoS | ||||||||||||
| URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000302211800044 | |||||||||||
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Yasukawa, Yukiko, Asoh, Hidetaka, Ono, Sachiko, 2012, Morphological Control of Periodic GaAs Hole Arrays by Simple Au-Mediated Wet Etching: ELECTROCHEMICAL SOC INC, D328–D332 p.
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