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  1. 060 工学部
  2. 0601 学術論文

Morphological Control of Periodic GaAs Hole Arrays by Simple Au-Mediated Wet Etching

http://hdl.handle.net/10091/15966
http://hdl.handle.net/10091/15966
e3ce41ae-ad67-4fba-bb90-2e41de16fc60
名前 / ファイル ライセンス アクション
Morphological_Control_Periodic_GaAs_Hole_Arrays.pdf Morphological_Control_Periodic_GaAs_Hole_Arrays.pdf (709.8 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2012-09-11
タイトル
タイトル Morphological Control of Periodic GaAs Hole Arrays by Simple Au-Mediated Wet Etching
言語
言語 eng
DOI
関連識別子 https://doi.org/10.1149/2.021206jes
関連名称 10.1149/2.021206jes
キーワード
主題 POROUS SILICON, NANOWIRE ARRAYS, CARBON NANOTUBES, SOLAR-CELLS, GAN, FABRICATION, CATALYST, SURFACE, METALS
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
著者 Yasukawa, Yukiko

× Yasukawa, Yukiko

Yasukawa, Yukiko

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Asoh, Hidetaka

× Asoh, Hidetaka

Asoh, Hidetaka

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Ono, Sachiko

× Ono, Sachiko

Ono, Sachiko

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出版者
出版者 ELECTROCHEMICAL SOC INC
引用
内容記述 JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 159(5):D328-D332 (2012)
書誌情報 JOURNAL OF THE ELECTROCHEMICAL SOCIETY

巻 159, 号 5, p. D328-D332, 発行日 2012
抄録
内容記述 In this study we report etched-GaAs morphologies with noble-metal layers embedded in the etching structures that are prepared by a simple wet process. Well-controlled n-GaAs (100) hole arrays are formed through metal-assisted chemical etching using a sputtered Au layer as an etching catalyst. GaAs exhibits anisotropic etching behavior, which originates from the substrate crystallography. The configuration of hole arrays is determined by the concentration of hydrofluoric acid included in the etching solution, the arrangement of Au catalysis layers relative to the preferential etching direction of the GaAs (100) substrate, and the etching time. The relationship between the etching process and the resultant hole structure is also discussed. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.021206jes] All rights reserved.
資源タイプ(コンテンツの種類)
ISSN
収録物識別子タイプ ISSN
収録物識別子 0013-4651
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA00697016
権利
権利情報 Copyright © The Electrochemical Society, Inc. 2012. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in J. Electrochem. Soc. 2012 volume 159, issue 5, D328-D332 (2012).
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
WoS
URL http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000302211800044
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Cite as

Yasukawa, Yukiko, Asoh, Hidetaka, Ono, Sachiko, 2012, Morphological Control of Periodic GaAs Hole Arrays by Simple Au-Mediated Wet Etching: ELECTROCHEMICAL SOC INC, D328–D332 p.

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