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  1. 060 工学部
  2. 0601 学術論文

Intrinsic Luminescence from Self-Trapped Excitons in Bi4Ge3O12 and Bi12GeO20: Decay Kinetics and Multiplication of Electronic Excitations

http://hdl.handle.net/10091/10296
http://hdl.handle.net/10091/10296
1df282fc-c3f4-42e2-a198-3910791186d1
名前 / ファイル ライセンス アクション
JPSJ.pdf JPSJ.pdf (690.1 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2010-09-08
タイトル
言語 en
タイトル Intrinsic Luminescence from Self-Trapped Excitons in Bi4Ge3O12 and Bi12GeO20: Decay Kinetics and Multiplication of Electronic Excitations
言語
言語 eng
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
著者 Itoh, M

× Itoh, M

WEKO 38259

Itoh, M

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Katagiri, T

× Katagiri, T

WEKO 38260

Katagiri, T

Search repository
出版者
出版者 Physical Society of Japan
引用
内容記述タイプ Other
内容記述 Journal of Physical Society of Japan. 79:074717 (2010)
書誌情報 Journal of Physical Society of Japan

巻 79, 号 7, p. 74717, 発行日 2010-07-12
抄録
内容記述タイプ Abstract
内容記述 The intrinsic luminescence appearing at 500 nm in Bi4Ge3O12 (e-BGO) and that at 450 nm in Bi12GeO20 (s-BGO) have been studied over a wide range of temperature T = 5–300 K by using a Nd:YAG laser and synchrotron radiation as excitation light sources. Luminescence decay curves in e-BGO depend dramatically on the laser power; they are composed of three decay components under high-density excitation, while they show a single exponential decay at low-density excitation. From temperature dependences of the decay time and emission intensity, it is clarified that the triplet state of a self-trapped exciton (STE) responsible for the e-BGO luminescence consists of a pair of closely spaced sublevels with separation energy of 5.7 meV. The decay curves of s-BGO luminescence are essentially nonexponential, irrespective of the excitation power. Time-resolved luminescence measurements of s-BGO suggest the existence of a singlet state lying higher than the triplet STE state. The excitation spectra for the intrinsic luminescence bands have been measured up to 35 eV (35 nm) at 5 K. From the obtained spectra, it is obvious that the multiplication of electronic excitations takes place efficiently in both BGOs. The production processes of multiple excitons are discussed by referring to a recent study on the electronic structures. ©2010 The Physical Society of Japan
資源タイプ(コンテンツの種類)
内容記述タイプ Other
内容記述 Article
ISSN
収録物識別子タイプ ISSN
収録物識別子 0031-9015
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA00704814
DOI
識別子タイプ DOI
関連識別子 https://doi.org/10.1143/JPSJ.79.074717
関連名称 10.1143/JPSJ.79.074717
権利
権利情報 ©2010 The Physical Society of Japan
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
WoS
表示名 Web of Science
URL http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000280096900048
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