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Intrinsic Luminescence from Self-Trapped Excitons in Bi4Ge3O12 and Bi12GeO20: Decay Kinetics and Multiplication of Electronic Excitations
http://hdl.handle.net/10091/10296
http://hdl.handle.net/10091/102961df282fc-c3f4-42e2-a198-3910791186d1
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
JPSJ.pdf (690.1 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2010-09-08 | |||||
| タイトル | ||||||
| タイトル | Intrinsic Luminescence from Self-Trapped Excitons in Bi4Ge3O12 and Bi12GeO20: Decay Kinetics and Multiplication of Electronic Excitations | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1143/JPSJ.79.074717 | |||||
| 関連名称 | 10.1143/JPSJ.79.074717 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Itoh, M
× Itoh, M× Katagiri, T |
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| 出版者 | ||||||
| 出版者 | Physical Society of Japan | |||||
| 引用 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Journal of Physical Society of Japan. 79:074717 (2010) | |||||
| 書誌情報 |
Journal of Physical Society of Japan 巻 79, 号 7, p. 74717, 発行日 2010-07-12 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The intrinsic luminescence appearing at 500 nm in Bi4Ge3O12 (e-BGO) and that at 450 nm in Bi12GeO20 (s-BGO) have been studied over a wide range of temperature T = 5–300 K by using a Nd:YAG laser and synchrotron radiation as excitation light sources. Luminescence decay curves in e-BGO depend dramatically on the laser power; they are composed of three decay components under high-density excitation, while they show a single exponential decay at low-density excitation. From temperature dependences of the decay time and emission intensity, it is clarified that the triplet state of a self-trapped exciton (STE) responsible for the e-BGO luminescence consists of a pair of closely spaced sublevels with separation energy of 5.7 meV. The decay curves of s-BGO luminescence are essentially nonexponential, irrespective of the excitation power. Time-resolved luminescence measurements of s-BGO suggest the existence of a singlet state lying higher than the triplet STE state. The excitation spectra for the intrinsic luminescence bands have been measured up to 35 eV (35 nm) at 5 K. From the obtained spectra, it is obvious that the multiplication of electronic excitations takes place efficiently in both BGOs. The production processes of multiple excitons are discussed by referring to a recent study on the electronic structures. ©2010 The Physical Society of Japan | |||||
| 資源タイプ（コンテンツの種類） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Article | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0031-9015 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00704814 | |||||
| 権利 | ||||||
| 権利情報 | ©2010 The Physical Society of Japan | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| WoS | ||||||
| 表示名 | Web of Science | |||||
| URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000280096900048 | |||||
