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Characterization of metal-insulator-semicomductor capacitors with insulating nitride films grown on 4H-SiC
http://hdl.handle.net/10091/1159
c023a1d2-ea39-4ccc-becc-b7777b799e7b
名前 / ファイル | ライセンス | アクション | |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-09-17 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Characterization of metal-insulator-semicomductor capacitors with insulating nitride films grown on 4H-SiC | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Ishida, Y
× Ishida, Y× Chen, C× Hagihara, M× Yamakami, T× Hayashibe, R× Abe, K× Kamimura, K |
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信州大学研究者総覧へのリンク | ||||||
氏名 | Kamimura, K | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.yVkaZVkh.html | |||||
出版者 | ||||||
出版者 | INST PURE APPLIED PHYSICS | |||||
引用 | ||||||
内容記述タイプ | Other | |||||
内容記述 | JAPANESE JOURNAL OF APPLIED PHYSICS. 47(1):676-678(2008) | |||||
書誌情報 |
JAPANESE JOURNAL OF APPLIED PHYSICS 巻 47, 号 1, p. 676-678, 発行日 2008-01 |
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資源タイプ(コンテンツの種類) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Article | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0021-4922 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA12295836 | |||||
DOI | ||||||
関連識別子 | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1143/JJAP.47.676 | |||||
関連名称 | ||||||
関連名称 | 10.1143/JJAP.47.676 | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
WoS | ||||||
表示名 | Web of Science | |||||
URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000255019500068 |